Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks
文献类型：期刊论文
| 作者 | Hu, P. P.1,2; Liu, J.1 ; Zhang, S. X.1; Maaz, K.3; Zeng, J.1; Zhai, P. F.1; Xu, L. J.1,2; Cao, Y. R.4; Duan, J. L.1; Li, Z. Z.1,2
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2018-09-01 |
| 卷号 | 430页码:59-63 |
| 关键词 | GaN HEMT Swift heavy ion Latent track Electrical characteristics |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2018.06.011 |
| 英文摘要 | AlGaN/GaN high electron mobility transistor (HEMT) devices were irradiated with swift heavy ions at different fluences. From structural and electrical studies, it was found that SHI irradiation leads to a significant deterioration of structural and electrical properties of the devices. Positive threshold voltage V-th was found to increase by about 85% as a result of irradiation with 1540-MeV Bi-209 ions at fluence of 1.7 x 10(11 )ions/cm(2), while this threshold voltage value was increased by 55% after irradiation with 2300-MeV Xe-129 at a fluence of 4 x 10(11) ions/cm(2). The maximum saturation drain current I-ds was decreased by about two orders of magnitude in the device after irradiation with Bi-209 ions. Quasi-continuous tracks were observed visually in the devices after irradiation with Bi-209 ions. The observed defects and disorders induced in the devices by SHI irradiation were found responsible for the decrease in carrier mobility and sheet carrier density, and finally, these defects resulted in the degradation of electrical characteristics of HEMTs. |
| WOS关键词 | ELECTRON-MOBILITY TRANSISTORS ; PROTON IRRADIATION ; GAN ; INP |
| 资助项目 | National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11375241] ; National Natural Science Foundation of China[11705246] ; National Natural Science Foundation of China[11505243] ; National Natural Science Foundation of China[11405229] ; Outstanding Young Scientist Project, Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH010] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000439682600011 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China ; Outstanding Young Scientist Project, Key Research Program of Frontier Sciences, CAS |
| 源URL | [http://119.78.100.186/handle/113462/59136]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.UCAS, Beijing 100049, Peoples R China 3.PINSTECH, Nanomat Res Grp, Phys Div, Islamabad 45650, Pakistan 4.Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Shaanxi, Peoples R China 5.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, P. P.,Liu, J.,Zhang, S. X.,et al. Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2018,430:59-63. |
| APA | Hu, P. P..,Liu, J..,Zhang, S. X..,Maaz, K..,Zeng, J..,...&Ma, X. H..(2018).Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,430,59-63. |
| MLA | Hu, P. P.,et al."Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 430(2018):59-63. |
入库方式： OAI收割
来源：近代物理研究所
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