Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C
文献类型：期刊论文
| 作者 | Han, W. T.1; Liu, H. P.2; Li, B. S.2 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2018-10-15 |
| 卷号 | 455页码:433-437 |
| 关键词 | He implantation Si Transmission electron microscopy Cavities Frank loops |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2018.05.228 |
| 英文摘要 | The implantation-induced defects of crystalline silicon implanted with helium ions to a dose of 5 x 10(16)/cm(2) at 600 degrees C were investigated. The sample was analyzed by transmission electron microscopy and high-resolution electron microscopy. Faceted cavities are observed in the damaged layer. Concurrently the distribution of interstitial-type defect clusters was investigated by conventional electron microscopy in bright and dark field. Many rod-like defects, which belong to {1 1 3}, {1 1 1} and (- 2 0 0), are formed in the end of the projected range. In front of the damaged layer, some ribbon-like defects are formed, which belong to <2 0 0>, ,<1 -1 1> and <1 3 - 3>. The possible reasons of the observed defect clusters are discussed. |
| WOS关键词 | TRANSIENT ENHANCED DIFFUSION ; HE IMPLANTATION ; HIGH FLUENCE ; SILICON ; TEMPERATURE ; CAVITIES ; DAMAGE ; VOIDS ; STABILITY ; EVOLUTION |
| 资助项目 | National Nature Science Foundation of China[11475229] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000438578700052 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://119.78.100.186/handle/113462/59682]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, B. S. |
| 作者单位 | 1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, W. T.,Liu, H. P.,Li, B. S.. Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C[J]. APPLIED SURFACE SCIENCE,2018,455:433-437. |
| APA | Han, W. T.,Liu, H. P.,&Li, B. S..(2018).Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C.APPLIED SURFACE SCIENCE,455,433-437. |
| MLA | Han, W. T.,et al."Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 degrees C".APPLIED SURFACE SCIENCE 455(2018):433-437. |
入库方式： OAI收割
来源：近代物理研究所
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