Electronic properties of defects in Weyl semimetal tantalum arsenide
文献类型：期刊论文
| 作者 | Fu, Yan-Long1,2; Li, Chang-Kai1,2; Zhang, Zhao-Jun1,2; Sang, Hai-Bo1,2; Cheng, Wei1,2,4; Zhang, Feng-Shou1,2,3 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2018-09 |
| 卷号 | 27期号:9页码:097101 |
| 关键词 | Weyl semimetal first-principles calculations band structures density of states |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/27/9/097101 |
| 英文摘要 | The tantalum arsenide (TaAs) is a topological Weyl semimetal which is a class of materials of gapless with three-dimensional topological structure. In order to develop a comprehensive description of the topological properties of the Weyl semimetal, we use the density functional theory to study several defects of TaAs after H irradiation and report the electronic dispersion curves and the density of states of these defects. We find that various defects have different influences on the topological properties. Interstitial H atom can shift the Fermi level. Both Ta vacancy with a concentration of 1/64 and As vacancy with a concentration of 1/64 destruct a part of the Weyl points. The substitutional H atom on a Ta site could repair only a part of the Weyl points, while H atom on an As site could repair all the Weyl points. |
| WOS关键词 | FERMION SEMIMETAL ; TAAS ; ARCS |
| 资助项目 | European Commissions of 7th Framework Programme (FP7-PEOPLE-2010-IRSES)[269131] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000445022300001 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://119.78.100.186/handle/113462/59705]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol, Minist Educ, Beijing 100875, Peoples R China 2.Beijing Radiat Ctr, Beijing 100875, Peoples R China 3.Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Gansu, Peoples R China 4.Chinese Acad Sci, Ningbo Inst Ind Technol, Ningbo 315201, Zhejiang, Peoples R China |
| 推荐引用方式 GB/T 7714 | Fu, Yan-Long,Li, Chang-Kai,Zhang, Zhao-Jun,et al. Electronic properties of defects in Weyl semimetal tantalum arsenide[J]. CHINESE PHYSICS B,2018,27(9):097101. |
| APA | Fu, Yan-Long,Li, Chang-Kai,Zhang, Zhao-Jun,Sang, Hai-Bo,Cheng, Wei,&Zhang, Feng-Shou.(2018).Electronic properties of defects in Weyl semimetal tantalum arsenide.CHINESE PHYSICS B,27(9),097101. |
| MLA | Fu, Yan-Long,et al."Electronic properties of defects in Weyl semimetal tantalum arsenide".CHINESE PHYSICS B 27.9(2018):097101. |
入库方式： OAI收割
来源：近代物理研究所
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