The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
文献类型：会议论文
| 作者 | Zheng, Qiwen1; Cui, Jiangwei1; Lu, Wu1; Guo, Hongxia1; Liu, Jie2 ; Yu, Xuefeng1; Wei, Ying1; Wang, Liang3; Liu, Jiaqi3; He, Chengfa1
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| 出版日期 | 2018-08 |
| 会议日期 | OCT 02-06, 2017 |
| 会议地点 | Geneva, SWITZERLAND |
| 关键词 | Charge sharing single-event upset (SEU) static random access memory total ionizing dose (TID) |
| 卷号 | 65 |
| 期号 | 8 |
| DOI | 10.1109/TNS.2018.2816583 |
| 页码 | 1920-1927 |
| 英文摘要 | Increased heavy ion single-event upset (SEU) sensitivity of radiation-harden 65-nm dual interlocked cell (DICE) static random access memory (SRAM) is observed after total ionizing dose (TID) irradiation. The mechanism of the increased SEU cross section is analyzed by cell stability testing and TCAD simulation. Cell stability testing result shows that static noise margin of the cell is diminished by TID-induced threshold voltage shifts. Critical charge inducing SEU is reduced in TID-irradiated cell, because it is more susceptible to noise. Moreover, charge sharing of 65-nm DICE SRAM is a function of TID. TID-enhanced NMOSFET and PMOSFET charge sharing under heavy ion track in n-well is proposed and verified by TCAD simulation. The resistor of ground contacts of p-well is increased by positively charged oxide trapped charges induced by TID. More electrons are collected by NMOSFET owing to the more server well collapse induced by the raised resistor of ground contacts. Critical charge inducing SEU is reduced, and more carries are collected in TID irradiated device, so that the SEU sensitivity of 65-nm DICE SRAM is increased by TID. |
| 会议录 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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| 会议录出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 会议录出版地 | 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA |
| 语种 | 英语 |
| 资助项目 | West Light Foundation of the Chinese Academy of Sciences[2015-XBQN-B-15] |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| WOS记录号 | WOS:000442363300061 |
| 源URL | [http://119.78.100.186/handle/113462/59707]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Beijing Microelect Technol Inst, Dept Radiat Hardening Technol, Beijing 100076, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, Qiwen,Cui, Jiangwei,Lu, Wu,et al. The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose[C]. 见:. Geneva, SWITZERLAND. OCT 02-06, 2017. |
入库方式： OAI收割
来源：近代物理研究所
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