SEU induced dynamic current variation of SRAM-based FPGA: A case study
文献类型：会议论文
| 作者 | Xing, Kefei1; Yang, Jun1; Wang, Yueke1; Hou, Mingdong2; He, Wei1 |
| 出版日期 | 2011 |
| 会议地点 | Sevilla, Spain |
| DOI | 10.1109/RADECS.2011.6131339 |
| 页码 | 815-821 |
| 英文摘要 | The dynamic current variation property of XC2V1000, a kind of SRAM-based Field Programmable Gate Arrays(FPGA), is presented by heavy ion irradiation. The relationship between dynamic current and the quantity of SEUs (Single Event Upsets) in configuration memory of FPGA is derived from the experimental data, and probable causation of the phenomenon is analyzed with the help of irradiation and fault injection experiment. The current increases gradually in several discrete steps and is probably due to routing resources confliction resulting from SEUs of configuration memory. In general, current increases when more SEUs occur, but it may also drops in some cases. And such increase will return to normal value when the FPGA is reconfigured. © 2011 IEEE. |
| 会议录 | 12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011
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| 会议录出版者 | Institute of Electrical and Electronics Engineers Inc. |
| 源URL | [http://119.78.100.186/handle/113462/63909]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.School of Mechatronics and Automation, National University of Defense Technology, Changsha 410073, China 2.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 73000, China |
| 推荐引用方式 GB/T 7714 | Xing, Kefei,Yang, Jun,Wang, Yueke,et al. SEU induced dynamic current variation of SRAM-based FPGA: A case study[C]. 见:. Sevilla, Spain. |
入库方式： OAI收割
来源：近代物理研究所
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