A GaAs photoemission electron source combined with a Reaction Microscope
文献类型:会议论文
作者 | Erengil, Zehra1,2; Ren, Xueguang1; Dorn, Alexander1; Pflüger, Thomas1; Xu, Shenyue1,3![]() |
出版日期 | 2009 |
会议地点 | Kalamazoo, MI, United states |
卷号 | 194 |
期号 | 14 |
DOI | 10.1088/1742-6596/194/14/142015 |
英文摘要 | Negative electron affinity GaAs photoemission electron sources are the electron sources of choice in many applications. We have built a GaAs photoemission source to be used in a reaction microscope for near threshold and kinematically complete experiments [1]. In this study, we present the current status of the photoelectron source, a precise characterization of the electron beam and first results of electron-atom scattering experiments. © 2009 IOP Publishing Ltd. |
会议录 | 26th International Conference on Photonic, Electronic and Atomic Collisions
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会议录出版者 | Institute of Physics Publishing |
源URL | [http://119.78.100.186/handle/113462/63936] ![]() |
专题 | 中国科学院近代物理研究所 |
作者单位 | 1.Max-Planck-Institute for Nuclear Physics, Heidelberg; 69117, Germany 2.University of Kocatepe, Afyon; 03200, Turkey 3.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou; 730000, China |
推荐引用方式 GB/T 7714 | Erengil, Zehra,Ren, Xueguang,Dorn, Alexander,et al. A GaAs photoemission electron source combined with a Reaction Microscope[C]. 见:. Kalamazoo, MI, United states. |
入库方式: OAI收割
来源:近代物理研究所
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