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Swift heavy ion irradiation induced luminescence from C-doped SiO2 films

文献类型：会议论文

作者Wang, Z.G.1; Jin, Y.F.1; Xie, E.Q.1,2; Zhu, Z.Y.1; Hou, M.D.1; Chen, X.X.1; Sun, Y.M.1; Zhang, Q.X.1
出版日期2002
卷号193
期号1-4
DOI10.1016/S0168-583X(02)00887-X
页码685-689
英文摘要In the present work, a novel technique, "low energy ion implantation + high-energy heavy ion irradiation", was used to synthesis light-emitting material. Experimentally, thermal-grown SiO2 films were firstly implanted with 120 keV C+ ions at room temperature (RT) to total doses in the range of (5.0 × 1016-1.0 × 1018) ions/cm2. These C-doped SiO2 films were then irradiated at RT with 335 and 855 MeV 40Ar or 1.98 GeV 84Kr ions to a fluence of 1.0 × 1012 ions/cm2, or with 1.75 GeV 136Xe ions to 1 × 1011, 5 × 1011 or 1 ×1012 ions/cm2, respectively. By measuring photoluminescence (PL) spectra of these samples excited by 320 nm light, the PL bands were investigated as functions of implantation ion dose, irradiation ion fluence and electronic energy loss Se. It was found that this technique is a useful tool to produce high quality light-emission structures, and that high-energy heavy ion irradiated C-doped SiO2 films should be an efficient blue-violet emitting material. Furthermore, Se plays a dominant role in the formation of the PL bands, and proper C-dopant and suitable irradiation fluence will enhance the PL efficiency. Possible origins of the blue-violet PL bands formed in the ion irradiated C-doped SiO2 films were discussed. © 2002 Elsevier Science B.V. All rights reserved.
会议录Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
会议录出版者Elsevier
源URL[http://119.78.100.186/handle/113462/63964]  
专题中国科学院近代物理研究所
通讯作者Wang, Z.G.
作者单位1.Institute of Modern Physics, Chinese Academy of Sciences, No. 363, Nanchang Road, Lanzhou 730000, China
2.Department of Physics, Lanzhou University, Lanzhou 730000, China
推荐引用方式
GB/T 7714		 Wang, Z.G.,Jin, Y.F.,Xie, E.Q.,et al. Swift heavy ion irradiation induced luminescence from C-doped SiO2 films[C]. 见:.

入库方式： OAI收割

来源：近代物理研究所

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