中国科学院机构知识库网格系统: Photoluminescence from C<sup>+</sup>-implanted SiO<inf>2</inf> films after swift heavy ion irradiations

中国科学院机构知识库网格

Chinese Academy of Sciences Institutional Repositories Grid

Photoluminescence from C⁺-implanted SiO2 films after swift heavy ion irradiations

文献类型：会议论文


作者	Wang, Z.G.; Liu, J.; Zhu, Z.Y.; Jin, Y.F.; Xie, E.Q.; Zhu, T.W.; Chen, X.X.; Sun, Y.M.; Hou, M.D.
出版日期	2002
卷号	191
期号	1-4
DOI	10.1016/S0168-583X(02)00549-9
页码	396-400
英文摘要	A novel technique, "low energy ion implantation+swift heavy ion irradiation", was used to synthesize light-emitting materials. In the present work, SiO2 films were implanted with 120 keV C⁺ ions at room temperature (RT) to total doses from 5.0×10¹⁶ to 1.0×10¹⁸ ions/cm², and then irradiated at RT with swift Xe or U ions to different irradiation fluences. Photoluminescence (PL) spectra of these samples were measured at RT and intense blue-violet PL bands were observed. The properties of the PL bands were analyzed as a function of implantation ion dose, swift heavy ion irradiation fluence and electronic energy loss of the irradiation ion in the sample. The possible origins of the observed blue and violet emissions were also discussed. © 2002 Elsevier Science B.V. All rights reserved.
会议录	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
会议录出版者	Elsevier
源URL	[http://119.78.100.186/handle/113462/63965]
专题	中国科学院近代物理研究所
通讯作者	Wang, Z.G.
作者单位	Institute of Modern Physics, Chinese Academy of Sciences, Nanchang Road, Lanzhou 730000, China
推荐引用方式 GB/T 7714	Wang, Z.G.,Liu, J.,Zhu, Z.Y.,et al. Photoluminescence from C⁺-implanted SiO2 films after swift heavy ion irradiations[C]. 见:.

入库方式： OAI收割

来源：近代物理研究所

浏览0

下载0

收藏0

其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。