Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation
文献类型:会议论文
作者 | Zhang, Liqing1,2; Zhang, Chonghong1; Huang, Qing3; Ding, Zhaonan1; Yan, Tingxing1,2; Chen, Yuguang1,2; Su, Changhao1,2 |
出版日期 | 2018-11-15 |
关键词 | SiC fibers Ar-ion irradiation TEM Raman scattering spectra SEM |
卷号 | 435 |
DOI | 10.1016/j.nimb.2018.06.002 |
页码 | 169-173 |
英文摘要 | Microstructure characterizations of silicon carbide (SiC) fibers irradiated with 246.8-MeV Ar16+ at different fluences were investigated using transmission electron microscopy (TEM), Raman scattering spectroscopy and scanning electron microscopy (SEM). TEM results reveal that 3C-SiC grains were surrounded by the carbon ribbons. The size of 3C-SiC grains first decreases and then increases with increasing ion fluence. Raman spectra display that SiC fiber consists of both 3C-SiC and abundant graphite phase. A redshift of the vibration mode of 3C-SiC in the fibers occured as compared with that of standard bulk 3C-SiC. Meanwhile, 4H-SiC phase was observed after irradiation. Furthermore, scattering intensity of all peaks in Raman spectra first reduces and then increases with increasing ion fluence, indicating that damage accumulates at low fluences and subsequently recovers to some extent at higher fluences. SEM results exhibit that the diameter of SiC fibers first shrinks and then expands, simultaneously, carbon concentration on fibers surface decreases while silicon concentration increases gradually, with increasing ion fluence, accompanied by an adsorption of oxygen. |
会议录 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS |
会议录出版者 | ELSEVIER SCIENCE BV |
会议录出版地 | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304] |
WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
WOS记录号 | WOS:000452585500031 |
源URL | [http://119.78.100.186/handle/113462/63970] |
专题 | 中国科学院近代物理研究所 |
通讯作者 | Zhang, Chonghong |
作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Liqing,Zhang, Chonghong,Huang, Qing,et al. Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation[C]. 见:. |
入库方式: OAI收割
来源:近代物理研究所
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