中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation

文献类型:会议论文

作者Zhang, Liqing1,2; Zhang, Chonghong1; Huang, Qing3; Ding, Zhaonan1; Yan, Tingxing1,2; Chen, Yuguang1,2; Su, Changhao1,2
出版日期2018-11-15
关键词SiC fibers Ar-ion irradiation TEM Raman scattering spectra SEM
卷号435
DOI10.1016/j.nimb.2018.06.002
页码169-173
英文摘要Microstructure characterizations of silicon carbide (SiC) fibers irradiated with 246.8-MeV Ar16+ at different fluences were investigated using transmission electron microscopy (TEM), Raman scattering spectroscopy and scanning electron microscopy (SEM). TEM results reveal that 3C-SiC grains were surrounded by the carbon ribbons. The size of 3C-SiC grains first decreases and then increases with increasing ion fluence. Raman spectra display that SiC fiber consists of both 3C-SiC and abundant graphite phase. A redshift of the vibration mode of 3C-SiC in the fibers occured as compared with that of standard bulk 3C-SiC. Meanwhile, 4H-SiC phase was observed after irradiation. Furthermore, scattering intensity of all peaks in Raman spectra first reduces and then increases with increasing ion fluence, indicating that damage accumulates at low fluences and subsequently recovers to some extent at higher fluences. SEM results exhibit that the diameter of SiC fibers first shrinks and then expands, simultaneously, carbon concentration on fibers surface decreases while silicon concentration increases gradually, with increasing ion fluence, accompanied by an adsorption of oxygen.
会议录NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
会议录出版者ELSEVIER SCIENCE BV
会议录出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
语种英语
资助项目National Natural Science Foundation of China[11675231] ; National Natural Science Foundation of China[91426304]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS记录号WOS:000452585500031
源URL[http://119.78.100.186/handle/113462/63970]  
专题中国科学院近代物理研究所
通讯作者Zhang, Chonghong
作者单位1.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Gansu, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
推荐引用方式
GB/T 7714
Zhang, Liqing,Zhang, Chonghong,Huang, Qing,et al. Microstructure damage in silicon carbide fiber induced by 246.8-MeV Ar-ion irradiation[C]. 见:.

入库方式: OAI收割

来源:近代物理研究所

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