中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation

文献类型:期刊论文

作者Zhao, Zhi-Ming; Wang, Zhi-Guang; Benyagoub, A.; Toulemonde, M.; Levesque, F.; Song, Yin; Jin, Yun-Fan; Sun, You-Mei
刊名Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics
出版日期2005
卷号29页码:824-829
ISSN号0254-3052
英文摘要SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0 × 1017, 5.0 × 1017 or 8.6 × 1017 ions/cm2, and then the C-doped SiO2 films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0 × 1011, 1.0 × 1012 or 3.8 × 1012 ions/cm2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR spectra, we found that significant chemical bonds such as Si-C and Si (C)-O-C bonds were formed in the C doped SiO2 films after high-energy Pb ion irradiation. It was also found that CO2 molecule was formed in the high dose C-doped SiO2 films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO2 molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO2 films after high-energy Pb ion irradiation.
出版者Science Press, Beijing, China
源URL[http://119.78.100.186/handle/113462/64243]  
专题中国科学院近代物理研究所
作者单位1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
2.CIRIL, BP5133, 14070 Caen Cedex 05, France
3.Graduated School, Chinese Academy of Sciences, Beijing 100049, China
推荐引用方式
GB/T 7714
Zhao, Zhi-Ming,Wang, Zhi-Guang,Benyagoub, A.,et al. FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation[J]. Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics,2005,29:824-829.
APA Zhao, Zhi-Ming.,Wang, Zhi-Guang.,Benyagoub, A..,Toulemonde, M..,Levesque, F..,...&Sun, You-Mei.(2005).FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation.Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics,29,824-829.
MLA Zhao, Zhi-Ming,et al."FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation".Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics 29(2005):824-829.

入库方式: OAI收割

来源:近代物理研究所

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