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Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films

文献类型：期刊论文

作者Wang, Z.G1; Xie, E.Q1,2; Jin, Y.F1; Chen, X.X1; Liu, C.L1; Zhu, Z.Y1; Hou, M.D1; Sun, Y.M1; Liu, J.1; Wang, Y.B1
刊名Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
出版日期2001
卷号179页码:289-293
ISSN号0168-583X
DOI10.1016/S0168-583X(01)00458-X
英文摘要SiO2 thin films were implanted at room temperature (RT) with 120 keV carbon ions to a dose of 1.0 × 1017 ions/cm2 and then irradiated at RT with high-energy 84Kr or 40Ar ions to a fluence of 1.0 × 1012 ions/cm2. Using 320 nm monochromatic ultra-violet light for excitation, photoluminescence (PL) properties of these samples were examined and intense blue PL bands were observed. It was found that the blue PL peak intensity changes with electronic energy loss of the irradiation ion in the sample. With increasing the electronic energy loss level, the PL peak intensity decreases and the peak position shifts towards to the short-wavelength direction. Furthermore, the existence of C-dopants enhances the luminescence property of the irradiated samples. © 2001 Elsevier Science B.V.
出版者Elsevier
源URL[http://119.78.100.186/handle/113462/64319]  
专题中国科学院近代物理研究所
作者单位1.Institute of Modern Physics, The Chinese Academy of Sciences, No. 363, Nanchang Road, Lanzhou 730000, China
2.Physics Department, Lanzhou University, Lanzhou 730000, China
推荐引用方式
GB/T 7714		 Wang, Z.G,Xie, E.Q,Jin, Y.F,et al. Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films[J]. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,2001,179:289-293.
APA Wang, Z.G.,Xie, E.Q.,Jin, Y.F.,Chen, X.X.,Liu, C.L.,...&Wang, Y.B.(2001).Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films.Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms,179,289-293.
MLA Wang, Z.G,et al."Photoluminescence from high-energy heavy ion irradiated C-doped SiO2 thin films".Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 179(2001):289-293.

入库方式： OAI收割

来源：近代物理研究所

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