6H-SiC blistering efficiency as a function of the hydrogen implantation fluence
文献类型：期刊论文
| 作者 | Daghbouj, N.1; Li, B. S.2; Karlik, M.1; Declemy, A.3 |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2019-02 |
| 卷号 | 466页码:141-150 |
| 关键词 | Hydrogen implantation 6H-SiC Smart-cut Blistering Strain |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2018.10.005 |
| 英文摘要 | Blistering phenomenon by H implantation into 6H-SiC and high-temperature annealing is only possible in a surprisingly narrow window of ion fluence. By combining experimental results with Finite Element Method (FEM) modeling, we deduce the fraction of the implanted fluence used to pressurize blister cavities. Moreover, the blistering efficiency depends on the amount of the damage produced during ion implantation because it affects the microstructure of the implanted samples. Maximum efficiency of the H ion implantation is obtained when the vacancy distribution is narrow. After implantation, the vacancies are available to favor the formation of vacancy-rich complexes that are able to trap most implanted H atoms then form H-2-filled nano-bubbles. Following annealing, the bubbles are sufficiently close enough to each other to allow an efficient overlap of the stress fields they generate. At higher fluence, the damage concentration becomes very large. Its distribution widens, and either a part of H (which remains) in the bubbles and platelets located outside the layer which contains cracks, is not involved in the formation of cracks or the formation of amorphous layer. After annealing, the amorphous/crystal interface becomes a receiver for the vacancies, resulting in fewer "free" vacancies, and therefore subsequently less H-2 for the build up of internal pressure of bubbles and the sustained growth of nano-cracks. The optimization of the smart-cut process usage is when the implantation induces 3.4% of strain maximum out-off-plane. |
| WOS关键词 | ION-IMPLANTATION ; SURFACE EXFOLIATION ; SILICON ; PERFORMANCE ; COMPOSITES ; MECHANISMS ; CUT |
| 资助项目 | National Nature Science Foundation of China[11475229] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000452842500018 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://119.78.100.186/handle/113462/64461]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Daghbouj, N.; Li, B. S. |
| 作者单位 | 1.Czech Tech Univ, Fac Nucl Sci & Phys Engn, Dept Mat, Trojanova 13, Prague 12000 2, Czech Republic 2.Chinese Acad Sci, Inst Modern Phys, 509 Nanchang Rd, Lanzhou 730000, Gansu, Peoples R China 3.Univ Poitiers, ENSMA, Dept Phys & Mecan Mat, Inst Pprime,CNRS,UPR 3346,SP2MI, Bd M&P Curie,BP 30179, F-86962 Futuroscope, France |
| 推荐引用方式 GB/T 7714 | Daghbouj, N.,Li, B. S.,Karlik, M.,et al. 6H-SiC blistering efficiency as a function of the hydrogen implantation fluence[J]. APPLIED SURFACE SCIENCE,2019,466:141-150. |
| APA | Daghbouj, N.,Li, B. S.,Karlik, M.,&Declemy, A..(2019).6H-SiC blistering efficiency as a function of the hydrogen implantation fluence.APPLIED SURFACE SCIENCE,466,141-150. |
| MLA | Daghbouj, N.,et al."6H-SiC blistering efficiency as a function of the hydrogen implantation fluence".APPLIED SURFACE SCIENCE 466(2019):141-150. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。