Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation
文献类型：期刊论文
| 作者 | Zhang, S. X.1; Liu, J.1 ; Zeng, J.1; Hu, P. P.1,2; Maaz, K.3; Xu, L. J.1; Duan, J. L.1; Zhai, P. F.1; Li, Z. Z.1,2; Liu, L.1,2
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| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2019-03-20 |
| 卷号 | 52页码:125102 |
| 关键词 | molybdenum selenide field-effect transistor electronic transportation swift heavy ion irradiation latent track |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/1361-6463/aafd82 |
| 英文摘要 | Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing and energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 x 10(9) ions cm(-2) to 6 x 10(10) ions cm(-2) were used to introduce amorphous defective regions, latent tracks, in MoSe2 to study the electronic transport behavior in irradiated TMDC-channel field-effect transistors (PETs). Defects in these materials induced by the swift heavy ion irradiation play a vital role in the device applications. The results show that carrier mobility decreases while resistance of the devices increases abruptly with increasing ion fluences. The impact mechanism of the latent tracks on electronic transport behavior in TMDC-channel FETs was analyzed in detail. It was assumed that the Bloch wave of electrons was strongly localized by the latent tracks induced by the SHI irradiation and the Bloch wave of electrons can be scattered by the latent tracks as well. This study helps to investigate the influence of the latent tracks on electronic transport in other 2D materials as well. |
| WOS关键词 | SEMICONDUCTORS ; DEFECTS ; SILICON |
| 资助项目 | National Natural Science Foundation of China[11705246] ; National Natural Science Foundation of China[11675233] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11505243] ; Natural Science Foundation of Gansu Province[17JR5RA316] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000456839600002 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China ; Natural Science Foundation of Gansu Province |
| 源URL | [http://119.78.100.186/handle/113462/66193]  |
| 专题 | 中国科学院近代物理研究所 |
| 作者单位 | 1.Chinese Acad Sci, Mat Res Ctr, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.PINSTECH, Phys Div, Nanomat Res Grp, Islamabad 45650, Pakistan |
| 推荐引用方式 GB/T 7714 | Zhang, S. X.,Liu, J.,Zeng, J.,et al. Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2019,52:125102. |
| APA | Zhang, S. X..,Liu, J..,Zeng, J..,Hu, P. P..,Maaz, K..,...&Liu, L..(2019).Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation.JOURNAL OF PHYSICS D-APPLIED PHYSICS,52,125102. |
| MLA | Zhang, S. X.,et al."Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation".JOURNAL OF PHYSICS D-APPLIED PHYSICS 52(2019):125102. |
入库方式： OAI收割
来源：近代物理研究所
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