Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation
文献类型:期刊论文
| 作者 | Yun, Jijun1,3; Xi, Li1,3; Liu, Jie2 ; Zhang, Shengxia2 ; Chang, Meixia1,3; Mao, Jian1,3; Zuo, Yalu1,3
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| 刊名 | APPLIED PHYSICS LETTERS
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| 出版日期 | 2019-07-15 |
| 卷号 | 115期号:3页码:5 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.5111937 |
| 通讯作者 | Zuo, Yalu(zuoyl@lzu.edu.cn) ; Xi, Li(xili@lzu.edu.cn) |
| 英文摘要 | In ferromagnet/heavy metal heterostructures, critical current density (J(C)) refers to the minimum current density required to generate spin-orbit torque (SOT) for effective magnetization manipulation, including switching of magnetization and moving of domain walls and magnetic skyrmions. This critical current density is a key factor for next-generation SOT-based magnetic random access memory, racetrack memory, and logic devices. In this work, the critical current density for magnetization switching and the thermal stability of Pt/Co/Ta heterostructures in response to ion irradiation are studied. It is found that ion irradiation represents a promising approach for the wide tuning of the magnetic properties, such as the coercive force and the perpendicular magnetic anisotropy constant. It is also found that J(C) is significantly reduced after 500eV Ar+ irradiation. Meanwhile, the ratio between the thermal stability factor E/k(B)T and J(C) increases with an increase in the irradiation dose, although E/k(B)T decreases slightly with the irradiation dose. This work demonstrates that J(C) can be significantly reduced by an appropriate ion irradiation process and thereby demonstrates a promising approach for effective reduction of the power consumption in SOT-based spintronic devices. |
| WOS关键词 | DRIVEN |
| 资助项目 | National Natural Science Foundation of China[51671098] ; Program for Changjiang Scholars and Innovative Research Team in University PCSIRT[IRT16R35] ; Natural Science Foundation of Gansu Province[17JR5RA210] ; Fundamental Research Funds for the Central Universities[lzujbky-2015-122] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000476586900031 |
| 出版者 | AMER INST PHYSICS |
| 资助机构 | National Natural Science Foundation of China ; Program for Changjiang Scholars and Innovative Research Team in University PCSIRT ; Natural Science Foundation of Gansu Province ; Fundamental Research Funds for the Central Universities |
| 源URL | [http://119.78.100.186/handle/113462/132930] ![]() |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Xi, Li; Zuo, Yalu |
| 作者单位 | 1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yun, Jijun,Xi, Li,Liu, Jie,et al. Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation[J]. APPLIED PHYSICS LETTERS,2019,115(3):5. |
| APA | Yun, Jijun.,Xi, Li.,Liu, Jie.,Zhang, Shengxia.,Chang, Meixia.,...&Zuo, Yalu.(2019).Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation.APPLIED PHYSICS LETTERS,115(3),5. |
| MLA | Yun, Jijun,et al."Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation".APPLIED PHYSICS LETTERS 115.3(2019):5. |
入库方式: OAI收割
来源:近代物理研究所
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