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Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3

文献类型：期刊论文

作者Wang, Y. M.3; Yu, J. L.3,6; Zeng, X. L.4; Chen, Y. H.4,5; Liu, Y.4; Cheng, S. Y.3,6; Lai, Y. F.3; Yin, C. M.1,7; He, K.2; Xue, Q. K.2
刊名JOURNAL OF PHYSICS-CONDENSED MATTER
出版日期2019-10-16
卷号31期号:41页码:8
ISSN号0953-8984
关键词circular photogalvanic effect linear photogalvanic effect three dimensional topological insulator
DOI10.1088/1361-648X/ab2b55
通讯作者Yu, J. L.(JLyu@semi.ac.cn) ; Chen, Y. H.(yhchen@semi.ac.cn)
英文摘要The circular (CPGE) and linear photogalvanic effect (LPGE) of a three-dimensional topological insulator Bi(2)Se(3 )thin film of seven quintuple layers excited by near-infrared (1064 nm) and mid-infrared (10.6 mu m) radiations have been investigated. The comparison of the CPGE current measured parallel and perpendicular to the incident plane, together with the comparison of the CPGE current under front and back illuminations, indicates that the CPGE tinder front illumination of 1064nm light is dominated by the top surface states of the Bi(2)Se(3 )thin film. The CPGE current excited by 10.6 mu m light is about one order larger than that excited by 1064nm light, which may be attributed to the smaller cancelation effect of the CPGE generated in the two-dimensional electron gas when excited by 10.6 mu m on light. Under the excitation of 1064nm light, the LPGE current is dominated by the component which shows an even parity of incident angles, while the I,PGE current excited by 10.6 mu m light is mainly contributed by the component which is an odd parity of incident angles. Both of the CPGE and LPGE currents excited by 1064nm decrease with increasing temperature, which may be owing to the decrease of the momentum relaxation time and the stronger electron-electron scattering with increasing temperature, respectively.
WOS关键词INTER-BAND EXCITATION ; SURFACE-STATE ; PHOTOCURRENTS ; SPECTRA
资助项目National Natural Science Foundation of China[61674038] ; National Natural Science Foundation of China[61306120] ; National Natural Science Foundation of China[61474114] ; National Natural Science Foundation of China[11574302] ; Foreign Cooperation Project of Fujian Province[2019I0005] ; National Key Research and Development Program[2016YFB0402303]
WOS研究方向Physics
语种英语
出版者IOP PUBLISHING LTD
WOS记录号WOS:000476595600001
资助机构National Natural Science Foundation of China ; Foreign Cooperation Project of Fujian Province ; National Key Research and Development Program
源URL[http://119.78.100.186/handle/113462/132962]  
专题中国科学院近代物理研究所
通讯作者Yu, J. L.; Chen, Y. H.
作者单位1.Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Dept Modern Phys, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Anhui, Peoples R China
2.Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Dept Phys, Beijing 100084, Peoples R China
3.Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China
4.Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Dev, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
5.Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
6.Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Jiangsu, Peoples R China
7.Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
推荐引用方式
GB/T 7714		 Wang, Y. M.,Yu, J. L.,Zeng, X. L.,et al. Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,2019,31(41):8.
APA Wang, Y. M..,Yu, J. L..,Zeng, X. L..,Chen, Y. H..,Liu, Y..,...&Xue, Q. K..(2019).Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3.JOURNAL OF PHYSICS-CONDENSED MATTER,31(41),8.
MLA Wang, Y. M.,et al."Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3".JOURNAL OF PHYSICS-CONDENSED MATTER 31.41(2019):8.

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来源：近代物理研究所

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