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Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C

文献类型：期刊论文

作者Li, Bingsheng2; Liu, Yuzhu1; Liu, Huiping3; Kang, Long3; Xiong, Anli2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2019-09-01
卷号454页码:45-49
关键词GaN He ion implantation Microstructure Extended defects
ISSN号0168-583X
DOI10.1016/j.nimb.2019.06.009
通讯作者Li, Bingsheng(libingshengmvp@163.com)
英文摘要Microstructure of extended defects in He-implanted GaN upon thermal annealing at temperature of 450 degrees C is studied. Before and after annealing, the samples are examined via cross-sectional transmission electron microscopy (XTEM) analysis. After annealing, extended defects, such as dislocation loops, stacking faults, tangled dislocations, and He bubbles are visible. Some extended defects diffuse toward the sample surface. Atomic structures of observed extended defects are investigated by high-resolution transmission electron microscopy (HRTEM). The research results are good for understanding the irradiation damage in GaN.
WOS关键词ATOMIC CONFIGURATIONS ; FRACTURE ; HELIUM ; MODEL ; IONS
资助项目National Natural Science Foundation of China[U1832133] ; National Natural Science Foundation of China[11475229] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000474316800007
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology
源URL[http://119.78.100.186/handle/113462/133073]  
专题中国科学院近代物理研究所
通讯作者Li, Bingsheng
作者单位1.Nanjing Univ Informat Sci & Technol, Jiansu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China
2.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China
3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式
GB/T 7714		 Li, Bingsheng,Liu, Yuzhu,Liu, Huiping,et al. Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,454:45-49.
APA Li, Bingsheng,Liu, Yuzhu,Liu, Huiping,Kang, Long,&Xiong, Anli.(2019).Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,454,45-49.
MLA Li, Bingsheng,et al."Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 degrees C".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 454(2019):45-49.

入库方式： OAI收割

来源：近代物理研究所

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