Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature
文献类型：期刊论文
| 作者 | Li, Bingsheng1,2 ; Liu, Huiping2; Lu, Xirui3; Kang, Long2; Sheng, Yanbin2; Xiong, Anli3
|
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2019-08-30 |
| 卷号 | 486页码:15-21 |
| 关键词 | GaN Xe irradiation Transmission electron microscopy Stacking faults Dislocation loops |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2019.04.213 |
| 通讯作者 | Li, Bingsheng(libingshengmvp@163.com) |
| 英文摘要 | The general features in ion-irradiated GaN are identified as basal stacking faults and dislocation loops. Understanding the atomic configuration of those lattice defects are important to reduce implantation damage during ion doping in GaN devices. In this study, however, due to the poor understanding of the basic mechanisms involved in such a process, Wurtzite GaN film bombarded with 5 MeV Xe ions was studied by using Transmission electron microscopy (TEM) and high resolution TEM (HRTEM). Analyzing the microstructure by TEM, we show the formation of a high density of basal stacking faults, pyramidal dislocation loops and point defect clusters. These defects were carefully investigated by high resolution TEM (HRTEM), we notice the growth of basal stacking faults accompanied with the formation of pyramidal and prism dislocation loops. The most of observed stacking faults and dislocation loops are identified as gallium interstitials. This work is expected to provide insights into the understanding mechanisms controlling the irradiation damage of GaN exposed to ion irradiation and will benefit the fabrication of GaN devices. |
| WOS关键词 | HYDROGEN IMPLANTATION ; DEFECTS ; MICROSTRUCTURE |
| 资助项目 | National Natural Science Foundation of China[11475229] ; National Natural Science Foundation of China[U1832133] ; Doctor Research Foundation of Southwest University of Science and Technology[18zx7141] |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000471748100002 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China ; Doctor Research Foundation of Southwest University of Science and Technology |
| 源URL | [http://119.78.100.186/handle/113462/133158]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Li, Bingsheng |
| 作者单位 | 1.Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 3.Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Bingsheng,Liu, Huiping,Lu, Xirui,et al. Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature[J]. APPLIED SURFACE SCIENCE,2019,486:15-21. |
| APA | Li, Bingsheng,Liu, Huiping,Lu, Xirui,Kang, Long,Sheng, Yanbin,&Xiong, Anli.(2019).Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature.APPLIED SURFACE SCIENCE,486,15-21. |
| MLA | Li, Bingsheng,et al."Atomic configurations of basal stacking faults and dislocation loops in GaN irradiated with Xe-20(+) ions at room temperature".APPLIED SURFACE SCIENCE 486(2019):15-21. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。