Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
文献类型：期刊论文
| 作者 | Zheng, Qiwen2; Cui, Jiangwei2; Lu, Wu2; Guo, Hongxia2; Liu, Jie1 ; Yu, Xuefeng2; Wang, Liang3; Liu, Jiaqi3; He, Chengfa2; Ren, Diyuan2
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| 刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE
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| 出版日期 | 2019-06-01 |
| 卷号 | 66期号:6页码:892-898 |
| 关键词 | Single-event multiple-cell upsets (MCUs) static random access memory total ionizing dose (TID) |
| ISSN号 | 0018-9499 |
| DOI | 10.1109/TNS.2018.2875451 |
| 通讯作者 | Zheng, Qiwen(qwzheng@ms.xjb.ac.cn) |
| 英文摘要 | We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by particle strike in pMOSFET (p-hits) or nMOSFET (n-hits) is distinguished by the MCU pattern. Analysis of MCU pattern shows that both p-hits MCU and n-hits MCU are enhanced by TID, and they have different mechanisms. Enhancement of n-hits MCU is due to the positive threshold voltage shift (Delta Vth) of the pull-up pMOSFET, while p-hits MCU is strengthened by the increase in the equivalent resistance of p-well contacts caused by oxide-trapped charges (Not) trapped in the shallow trench isolation. |
| WOS关键词 | SEU SENSITIVITY ; IRRADIATION ; DEPENDENCE ; CHARGE ; NM |
| 资助项目 | National Natural Science Foundation of China[11505282] ; National Natural Science Foundation of China[11605282] ; National Natural Science Foundation of China[U1532261] ; West Light Foundation of the Chinese Academy of Sciences[2015-XBQN-B-15] |
| WOS研究方向 | Engineering ; Nuclear Science & Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000472188900007 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 资助机构 | National Natural Science Foundation of China ; West Light Foundation of the Chinese Academy of Sciences |
| 源URL | [http://119.78.100.186/handle/113462/133164]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Zheng, Qiwen |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China 2.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 3.Beijing Microelect Technol Inst, Beijing 100076, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zheng, Qiwen,Cui, Jiangwei,Lu, Wu,et al. Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2019,66(6):892-898. |
| APA | Zheng, Qiwen.,Cui, Jiangwei.,Lu, Wu.,Guo, Hongxia.,Liu, Jie.,...&Guo, Qi.(2019).Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,66(6),892-898. |
| MLA | Zheng, Qiwen,et al."Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 66.6(2019):892-898. |
入库方式： OAI收割
来源：近代物理研究所
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