Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs
文献类型：期刊论文
| 作者 | Zhao, Pei-Xiong3,5 ; Geng, Chao4; Zhang, Zhan-Gang1; Liu, Jie3,5; Li, Xiao-Yuan4; Liu, Tian-Qi2,3,5; Li, Dong-Qing3,5; Cai, Chang3,5; Mo, Li-Hua3,5; Li, Qing-Gang3,5
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| 刊名 | NUCLEAR SCIENCE AND TECHNIQUES
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| 出版日期 | 2019-05-01 |
| 卷号 | 30期号:5页码:11 |
| 关键词 | Anti-fuse PROM Single event effects Heavy ions Pulsed laser Space error rate |
| ISSN号 | 1001-8042 |
| DOI | 10.1007/s41365-019-0602-6 |
| 通讯作者 | Liu, Jie(j.liu@impcas.ac.cn) |
| 英文摘要 | Single event effects of 1-T structure programmable read-only memory (PROM) devices fabricated with a 130-nm complementary metal oxide semiconductor-based thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset (SEU) for radiation-hardened PROMs were measured using a linear energy transfer (LET) ranging from 9.2 to 95.6 MeV cm(2) mg(-1). The result indicated that the LET threshold for a dynamic bit upset was similar to 9 MeV cm(2) mg(-1), which was lower than the threshold of similar to 20 MeV cm(2) mg(-1) for an address counter upset owing to the additional triple modular redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing Bi-209 ions with extremely high LET values (similar to 91.6 MeV cm(2) mg(-1)) and large ion fluence (similar to 1 x 10(8) ions cm(-2)). To identify the detailed sensitive position of a SEU in PROMs, a pulsed laser with a 5-mu m beam spot was used to scan the entire surface of the device. This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a Ta-181 experiment. Based on the experimental data and a rectangular parallelepiped model of the sensitive volume, the space error rates for the used PROMs were calculated using the CREME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit. |
| WOS关键词 | SEU ; FIGURE ; MERIT ; UPSET |
| 资助项目 | National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233] ; Opening Project of Science and Technology on Reliability Physics and Application Technology of the Electronic Component Laboratory[ZHD 201604] |
| WOS研究方向 | Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000464768200002 |
| 出版者 | SPRINGER SINGAPORE PTE LTD |
| 资助机构 | National Natural Science Foundation of China ; Opening Project of Science and Technology on Reliability Physics and Application Technology of the Electronic Component Laboratory |
| 源URL | [http://119.78.100.186/handle/113462/133728]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Jie |
| 作者单位 | 1.Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China 2.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Acad Shenzhen State Microelect Co Ltd, Shenzhen 518004, Peoples R China 5.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Pei-Xiong,Geng, Chao,Zhang, Zhan-Gang,et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs[J]. NUCLEAR SCIENCE AND TECHNIQUES,2019,30(5):11. |
| APA | Zhao, Pei-Xiong.,Geng, Chao.,Zhang, Zhan-Gang.,Liu, Jie.,Li, Xiao-Yuan.,...&Ye, Bing.(2019).Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs.NUCLEAR SCIENCE AND TECHNIQUES,30(5),11. |
| MLA | Zhao, Pei-Xiong,et al."Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs".NUCLEAR SCIENCE AND TECHNIQUES 30.5(2019):11. |
入库方式： OAI收割
来源：近代物理研究所
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