中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 近代物理研究所
  3. 中国科学院近代物理研究所
Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs

文献类型：期刊论文

作者Ke, Lingyun1,3; Zhao, Peixiong1,3; Liu, Jie3; Fan, Xue2; Cai, Chang1,3; He, Ze1,3; Li, Dongqing1,3; Liu, Tianqi1,3
刊名ELECTRONICS
出版日期2019-03-14
卷号8期号:3页码:13
关键词FPGA radiation hardening single event upsets heavy ions error rates
ISSN号2079-9292
DOI10.3390/electronics8030323
通讯作者Fan, Xue(x_fan@foxmail.com) ; Liu, Tianqi(liutianqi@impcas.ac.cn)
英文摘要The 65 nm Static Random Access Memory (SRAM) based Field Programmable Gate Array (FPGA) was designed and manufactured, which employed tradeoff radiation hardening techniques in Configuration RAMs (CRAMs), Embedded RAMs (EBRAMs) and flip-flops. This radiation hardened circuits include large-spacing interlock CRAM cells, area saving debugging logics, the redundant flip-flops cells, and error mitigated 6-T EBRAMs. Heavy ion irradiation test result indicates that the hardened CRAMs had a high linear energy transfer threshold of upset similar to 18 MeV/(mg/cm2) with an extremely low saturation cross-section of 6.5 x 10-13 cm2/bit, and 71% of the upsets were single-bit upsets. The combinational use of triple modular redundancy and check code could decline similar to 86.5% upset errors. Creme tools were used to predict the CRAM upset rate, which was merely 8.46 x 10-15/bit/day for the worst radiation environment. The effectiveness of radiation tolerance has been verified by the irradiation and prediction results.
WOS关键词MITIGATION
资助项目National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[11675233]
WOS研究方向Engineering
语种英语
WOS记录号WOS:000464263600003
出版者MDPI
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/134000]  
专题中国科学院近代物理研究所
通讯作者Fan, Xue; Liu, Tianqi
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chengdu Technol Univ, Chengdu 611730, Sichuan, Peoples R China
3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
推荐引用方式
GB/T 7714		 Ke, Lingyun,Zhao, Peixiong,Liu, Jie,et al. Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs[J]. ELECTRONICS,2019,8(3):13.
APA Ke, Lingyun.,Zhao, Peixiong.,Liu, Jie.,Fan, Xue.,Cai, Chang.,...&Liu, Tianqi.(2019).Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs.ELECTRONICS,8(3),13.
MLA Ke, Lingyun,et al."Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs".ELECTRONICS 8.3(2019):13.

入库方式： OAI收割

来源：近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。