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Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile

文献类型：期刊论文

作者Li, Hui3,4; Qu, Fei3; Luo, Haitian3; Niu, Xiaona5; Chen, Jingwei5; Zhang, Yi1,6; Yao, Huijun2; Jia, Xiaojie3; Gu, Hongwei3,4; Wang, Wenjing3,4
刊名RESULTS IN PHYSICS
出版日期2019-03-01
卷号12页码:704-711
关键词Cu(InxGa1-x)Se-2 solar cells Ultrathin High interface quality Heavy ion bombardment
ISSN号2211-3797
DOI10.1016/j.rinp.2018.12.043
通讯作者Li, Hui(lihui@mail.iee.ac.cn) ; Gu, Hongwei(guhw@mail.iee.ac.cn)
英文摘要Reducing the Cu(InxGa1-x)Se-2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 mu m-thickness-CIGS was synthesized via a three-stage co-evaporation method. The obtained CIGS solar cells were characterized by capacitance-voltage, capacitance-frequency, secondary ion mass spectrometry, X-ray fluorescence, transmission electron microscope, and electron beam induced current techniques. By optimizing the grain size, interface quality, and the Ga gradient in the ultrathin CIGS solar cell, the highest efficiency reached to 11.72% without any light trapping and anti-reflecting coating techniques. Compared with the typical CIGS solar cell with a thickness of 2.3 mu m, the ultrathin CIGS solar cell showed a higher open-circuit voltage due to formation a back electrical field. The grain boundaries were found to be beneficial to the carrier's separation and transport. The ultrathin CIGS solar cell had good ability to resist ion bombardment, suggesting its potential application in the space devices. Our results provide a strategy to achieve high-efficiency ultrathin CIGS solar cells.
WOS关键词CU(IN,GA)SE-2 THIN-FILMS ; THICKNESS
资助项目National Natural Science Foundation of China[51472239] ; National Natural Science Foundation of China[51572132] ; National Natural Science Foundation of China[11575261] ; National Natural Science Foundation of China[11775279] ; National Natural Science Foundation of China[JPPT-2017-99] ; National Natural Science Foundation of China[JPPT-2017-101]
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000460704700096
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China
源URL[http://119.78.100.186/handle/113462/134682]  
专题中国科学院近代物理研究所
通讯作者Li, Hui; Gu, Hongwei
作者单位1.Nankai Univ, Tianjin Key Lab Photoelect Thin Film Devices & Te, Tianjin 300071, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
3.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
5.Hebei Univ, Inst Photovolta, Coll Phys Sci & Technol, Baoding 071002, Peoples R China
6.Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
推荐引用方式
GB/T 7714		 Li, Hui,Qu, Fei,Luo, Haitian,et al. Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile[J]. RESULTS IN PHYSICS,2019,12:704-711.
APA Li, Hui.,Qu, Fei.,Luo, Haitian.,Niu, Xiaona.,Chen, Jingwei.,...&Wang, Wenjing.(2019).Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile.RESULTS IN PHYSICS,12,704-711.
MLA Li, Hui,et al."Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile".RESULTS IN PHYSICS 12(2019):704-711.

入库方式： OAI收割

来源：近代物理研究所

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