Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing
文献类型：期刊论文
| 作者 | Li Bing-Sheng ; Zhang Hong-Hua; Zhou Li-Hong; Yang Yi-Tao; Zhang Chong-Hong
|
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2009 |
| 卷号 | 18期号:1页码:246-250 |
| 关键词 | helium-ion irradiation defect activation energy charge-sensitive deep level transient spectroscopy |
| ISSN号 | 1674-1056 |
| 英文摘要 | Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres. |
| WOS关键词 | IMPLANTED SILICON ; RADIATION ; SEMICONDUCTORS ; DAMAGE ; EVOLUTION ; DEFECTS ; DEVICES ; OXYGEN ; SI |
| 资助项目 | National Natural Science Foundation of China[10575124] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000262494700040 |
| 出版者 | IOP PUBLISHING LTD |
| 资助机构 | National Natural Science Foundation of China |
| 公开日期 | 2009-11-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/120]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Li Bing-Sheng |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Bing-Sheng,Zhang Hong-Hua,Zhou Li-Hong,et al. Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing[J]. CHINESE PHYSICS B,2009,18(1):246-250. |
| APA | Li Bing-Sheng,Zhang Hong-Hua,Zhou Li-Hong,Yang Yi-Tao,&Zhang Chong-Hong.(2009).Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing.CHINESE PHYSICS B,18(1),246-250. |
| MLA | Li Bing-Sheng,et al."Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon, as-irradiated and after thermal annealing".CHINESE PHYSICS B 18.1(2009):246-250. |
入库方式： OAI收割
来源：近代物理研究所
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