The technics and test results and preliminary applications of Si multi-strip detector fabricated by using microelectronic technique were described in this paper. The sensitive area of this kind of detector is 50mm x 20mm. The P side surface was divided into equal 16 strips with 140 mu m spece between two strips,each one having length of 20mm and width of 3mm. A reverse leakage current less than 2nA and an energy resolution of 0.4%-0.9% (for Pu-239 alpha particles) and a crosstalk between neighboring strips of 4% -8% have been obtained when the detector was operated in full depletion condition. An energy resolution of 0.27% was achieved for measuring of 7.2MeV/u C ions.