FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation
文献类型：期刊论文
| 作者 | Zhao, ZM; Benyagoub, A; Wang, ZG ; Sun, YM; Jin, YF; Song, Y; Levesque, F; Toulemonde, M
|
| 刊名 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
 |
| 出版日期 | 2005-08-01 |
| 卷号 | 29期号:8页码:824-829 |
| 关键词 | low energy ion implantation high-energy heavy ion irradiation atom-mixing FTIR spectrum phase transition bonding formation |
| ISSN号 | 0254-3052 |
| 英文摘要 | SiO2 films were firstly implanted at room temperature (RT) with 120keV C-ions to a dose of 2.0 x 10(17), 5.0 x 10(17) or 8.6 x 10(17) ions/cm(2), and then the C-doped SiO2 films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0 x 10(11), 1.0 X 10(12) or 3.8 x 10(12) ions/cm(2), respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTlR spectra, we found that significant chemical bonds such as Si-C and Si (C)-O-C bonds were formed in the C doped SiO2 films after high-energy Ph ion irradiation. It was also found that CO2 Molecule was formed in the high dose C-doped SiO2 films after large fluence Ph ion irradiations. The existence of a large number of Si-C bonding and CO2 molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO2 films after high-energy Ph ion irradiation. |
| WOS关键词 | VISIBLE PHOTOLUMINESCENCE ; SILICON ; FILMS ; SIO2-FILMS ; CARBON ; NANOCRYSTALS ; LUMINESCENCE ; TEMPERATURE ; ALLOYS |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000231027200021 |
| 出版者 | SCIENCE PRESS |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/1163]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Zhao, ZM |
| 作者单位 | 1.CIRIL, F-14070 Caen, France 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, ZM,Benyagoub, A,Wang, ZG,et al. FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29(8):824-829. |
| APA | Zhao, ZM.,Benyagoub, A.,Wang, ZG.,Sun, YM.,Jin, YF.,...&Toulemonde, M.(2005).FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,29(8),824-829. |
| MLA | Zhao, ZM,et al."FTIR study of C-implanted SiO2 after high-energy Pb-ion irradiation".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 29.8(2005):824-829. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。