A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC
文献类型：期刊论文
| 作者 | Sun, YM; Zhang, CH ; Donnelly, SE; Vishnyakov, VM; Evans, JH; Shibayama, T
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2004-06-01 |
| 卷号 | 218页码:53-60 |
| 关键词 | bubbles helium 4H-SiC TEM RBS-channeling modeling |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2003.12.082 |
| 英文摘要 | In this work, the annealing behavior of microstructures in 4H-SiC helium-implanted at about 500 K to moderate doses (2.5-5)x10(16) ions cm(-2) is studied by combining transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is found that a low concentration of planar clusters of helium bubbles in ring structures was formed in a narrow range of dose in a well-defined depth region of the specimens on annealing above 973 K. The formation of the bubble layer is associated with remarkable distortion and deformation in the matrix. A simple model based on the frozen matrix assumption was developed to study the production of defects in SiC below the temperature of vacancy mobility. We found that the main features of the depth distribution of the bubble layer can be understood using this model if assuming the planar clusters of bubbles evolve from vacancy clusters larger than a critical size through an intermediate stage of helium platelets. (C) 2004 Elsevier B.V. All rights reserved. |
| WOS关键词 | SILICON-CARBIDE ; EVOLUTION ; MOLYBDENUM ; PLATELETS ; BUBBLES |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000221561000009 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/1195]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, CH |
| 作者单位 | 1.Univ Salford, Mat Res Inst, Salford M5 4WT, Lancs, England 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Hokkaido Univ, Ctr Adv Res Energy Technol, Sapporo, Hokkaido 0608628, Japan |
| 推荐引用方式 GB/T 7714 | Sun, YM,Zhang, CH,Donnelly, SE,et al. A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2004,218:53-60. |
| APA | Sun, YM,Zhang, CH,Donnelly, SE,Vishnyakov, VM,Evans, JH,&Shibayama, T.(2004).A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,218,53-60. |
| MLA | Sun, YM,et al."A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 218(2004):53-60. |
入库方式： OAI收割
来源：近代物理研究所
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