中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The dependence of single event upset cross-section on incident angle

文献类型:期刊论文

作者Zhu, ZY; Zhang, QX; Hou, MD; Liu, J; Wang, ZG; Jin, YF; Sun, YM
刊名ACTA PHYSICA SINICA
出版日期2004-02-01
卷号53期号:1页码:566-570
关键词SRAM single event upset multiple bit upset incident angle deposited energy
ISSN号1000-3290
英文摘要swift heavy ions delivered by Heavy Ion Research Facility at Lanzhou (HIRFL) were used to bombard the 32k SRAM IDT71256 at angles from 0degrees-85degrees. The multiple bit upset(MBU) ratio can reach as high as 70% when the device was tested with 15.14MeV/u Xe-136 ions or at large angles with Ar-36 ions. The angular effect of cross section is mainly due to occurrence of MBU especially at large angles. The MBU ratio is determined by the energy deposited in the whole sensitive layer and that of more than two bit upset is increased with incident angle.
WOS关键词MULTIPLE-BIT UPSETS ; HEAVY-ION ; SEU ; THICKNESS ; ENERGY ; SRAM
WOS研究方向Physics
语种英语
WOS记录号WOS:000189048100044
出版者CHINESE PHYSICAL SOC
公开日期2010-10-29
源URL[http://ir.imp.cas.cn/handle/113462/1837]  
专题近代物理研究所_近代物理研究所知识存储(2010之前)
通讯作者Zhang, QX
作者单位1.Chinese Acad Sci, Ctr Space Sci & Appl Res, Beijing 100080, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Zhu, ZY,Zhang, QX,Hou, MD,et al. The dependence of single event upset cross-section on incident angle[J]. ACTA PHYSICA SINICA,2004,53(1):566-570.
APA Zhu, ZY.,Zhang, QX.,Hou, MD.,Liu, J.,Wang, ZG.,...&Sun, YM.(2004).The dependence of single event upset cross-section on incident angle.ACTA PHYSICA SINICA,53(1),566-570.
MLA Zhu, ZY,et al."The dependence of single event upset cross-section on incident angle".ACTA PHYSICA SINICA 53.1(2004):566-570.

入库方式: OAI收割

来源:近代物理研究所

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