The dependence of single event upset cross-section on incident angle
文献类型：期刊论文
| 作者 | Zhu, ZY; Zhang, QX; Hou, MD; Liu, J; Wang, ZG; Jin, YF; Sun, YM |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004-02-01 |
| 卷号 | 53期号:1页码:566-570 |
| 关键词 | SRAM single event upset multiple bit upset incident angle deposited energy |
| ISSN号 | 1000-3290 |
| 英文摘要 | swift heavy ions delivered by Heavy Ion Research Facility at Lanzhou (HIRFL) were used to bombard the 32k SRAM IDT71256 at angles from 0degrees-85degrees. The multiple bit upset(MBU) ratio can reach as high as 70% when the device was tested with 15.14MeV/u Xe-136 ions or at large angles with Ar-36 ions. The angular effect of cross section is mainly due to occurrence of MBU especially at large angles. The MBU ratio is determined by the energy deposited in the whole sensitive layer and that of more than two bit upset is increased with incident angle. |
| WOS关键词 | MULTIPLE-BIT UPSETS ; HEAVY-ION ; SEU ; THICKNESS ; ENERGY ; SRAM |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000189048100044 |
| 出版者 | CHINESE PHYSICAL SOC |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/1837]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Zhang, QX |
| 作者单位 | 1.Chinese Acad Sci, Ctr Space Sci & Appl Res, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, ZY,Zhang, QX,Hou, MD,et al. The dependence of single event upset cross-section on incident angle[J]. ACTA PHYSICA SINICA,2004,53(1):566-570. |
| APA | Zhu, ZY.,Zhang, QX.,Hou, MD.,Liu, J.,Wang, ZG.,...&Sun, YM.(2004).The dependence of single event upset cross-section on incident angle.ACTA PHYSICA SINICA,53(1),566-570. |
| MLA | Zhu, ZY,et al."The dependence of single event upset cross-section on incident angle".ACTA PHYSICA SINICA 53.1(2004):566-570. |
入库方式： OAI收割
来源：近代物理研究所
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