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Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC

文献类型：期刊论文

作者Donnelly, SE; Vishnyakov, VM; Evans, JH; Zhang, CH
刊名JOURNAL OF APPLIED PHYSICS
出版日期2003-11-01
卷号94期号:10页码:6017-6022
ISSN号0021-8979
DOI10.1063/1.1611630
英文摘要A cross-sectional transmission electron microscope investigation of dose dependence and annealing behavior of microstructures in helium-implanted silicon carbide is presented. Specimens of silicon carbide (4H-SiC) were mainly implanted with 30-keV-He ions at intermediate temperatures of 500 and 873 K to doses ranging from 5x10(15) to 2x10(17) cm(-2), and subsequently annealed at temperatures up to 1173 K. For comparison other specimens were implanted at 293 K up to 5x10(15) cm(-2) and subsequently annealed. Three dose regimes of microstructural evolution were found, each of them exhibiting quite different annealing behavior. No cavities were found at the low dose range below 3.5x10(16) cm(-2). At intermediate doses of (3.5-5)x10(16) cm(-2), a low density of planar clusters of bubbles located in the basal plane was found in a well defined region around the damage peak on annealing above 973 K. After implantation to the high dose of 10(17) cm(-2), a high density of bubbles in alignment in the basal plane was formed, and remained stable during the subsequent annealing at temperatures up to 1173 K. The difference in annealing behavior suggests that helium is trapped with different energies for the three dose regimes. There appears to be a threshold dose for the formation of the bubble clusters of approximately 5x10(15) cm(-2) for implantation at room temperature. This increases to a value between 2x10(16) and 5x10(16) cm(-2) for implantation at 500 and 873 K, respectively. Such a temperature dependence is consistent with that of effective damage production, indicating a certain level of damage is necessary for the formation of bubble clusters. The formation of planar clusters of bubbles at the intermediate doses is ascribed to an Ostwald ripening (OR) process through the dissociation of the simple He/vacancy clusters and metastable bubbles and the formation of planar cavities of helium on annealing above 973 K. (C) 2003 American Institute of Physics.
WOS关键词IN-SITU OBSERVATION ; SILICON-CARBIDE ; DAMAGE EVOLUTION ; ION IRRADIATION ; SIC CRYSTALS ; STRUCTURAL-CHANGES ; TEMPERATURE ; MOLYBDENUM ; PLATELETS ; BUBBLES
WOS研究方向Physics
语种英语
WOS记录号WOS:000186138600085
出版者AMER INST PHYSICS
公开日期2010-10-29
源URL[http://ir.imp.cas.cn/handle/113462/1911]  
专题近代物理研究所_近代物理研究所知识存储（2010之前）
近代物理研究所_材料研究中心
通讯作者Zhang, CH
作者单位Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Donnelly, SE,Vishnyakov, VM,Evans, JH,et al. Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC[J]. JOURNAL OF APPLIED PHYSICS,2003,94(10):6017-6022.
APA Donnelly, SE,Vishnyakov, VM,Evans, JH,&Zhang, CH.(2003).Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC.JOURNAL OF APPLIED PHYSICS,94(10),6017-6022.
MLA Donnelly, SE,et al."Dose dependence of formation of nanoscale cavities in helium-implanted 4H-SiC".JOURNAL OF APPLIED PHYSICS 94.10(2003):6017-6022.

入库方式： OAI收割

来源：近代物理研究所

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