Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description
文献类型：期刊论文
| 作者 | Chettah, A.3; Kucal, H.1,2; Wang, Z. G.1,2,4; Kac, M.1,2,5; Meftah, A.3; Toulemonde, M.1,2 |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2009-08-15 |
| 卷号 | 267期号:16页码:2719-2724 |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2009.05.063 |
| 英文摘要 | Recent experimental works devoted to the phenomena of mixing observed at metallic multilayers Ni/Si irradiated by swift heavy ions irradiations make it necessary to revisit the insensibility of crystalline Si under huge electronic excitations. Knowing that Ni is an insensitive material, such observed mixing would exist only if Si is a sensitive material. In order to extend the study of swift heavy ion effects to semiconductor materials, the experimental results obtained in bulk silicon have been analyzed within the framework of the inelastic thermal spike model. Provided the quenching of a boiling ( or vapor) phase is taken as the criterion of amorphization, the calculations with an electron-phonon coupling constant g(300 K) = 1.8 x 10(12) W/cm(3)/K and an electronic diffusivity D(e)(300 K) = 80 cm(2)/s nicely reproduce the size of observed amorphous tracks as well as the electronic energy loss threshold value for their creation, assuming that they result from the quenching of the appearance of a boiling phase along the ion path. Using these parameters for Si in the case of a Ni/Si multilayer, the mixing observed experimentally can be well simulated by the inelastic thermal spike model extended to multilayers, assuming that this occurs in the molten phase created at the Ni interface by energy transfer from Si. (C) 2009 Elsevier B. V. All rights reserved. |
| WOS关键词 | HEAVY-ION IRRADIATION ; LATENT TRACK FORMATION ; MEV FULLERENES ; ENERGY DEPOSITION ; DAMAGE EVOLUTION ; CROSS-SECTION ; SWIFT ; METALS ; TEMPERATURE ; BILAYERS |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000272422400038 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5247]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Toulemonde, M. |
| 作者单位 | 1.CEA CNRS ENSICAEN, CIMAP Lab, F-14070 Caen 5, France 2.Univ Caen, F-14070 Caen, France 3.Univ Skikda, LRPCSI, Skikda 21000, Algeria 4.CAS, Inst Modern Phys, Lanzhou 730000, Peoples R China 5.Inst Nucl Phys PAN, PL-31342 Krakow, Poland |
| 推荐引用方式 GB/T 7714 | Chettah, A.,Kucal, H.,Wang, Z. G.,et al. Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(16):2719-2724. |
| APA | Chettah, A.,Kucal, H.,Wang, Z. G.,Kac, M.,Meftah, A.,&Toulemonde, M..(2009).Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(16),2719-2724. |
| MLA | Chettah, A.,et al."Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.16(2009):2719-2724. |
入库方式： OAI收割
来源：近代物理研究所
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