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Experimental study on heavy ion single event effects in SOI SRAMs

文献类型：期刊论文

作者Li Yonghong1; He Chaohui1; Zhao Fazhan2; Guo Tianlei2; Liu Gang2; Han Zhengsheng2; Liu Jie3; Guo Gang4
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2009
卷号267期号:1页码:83-86
关键词SOI SRAM Single event upset Single event upset rate
ISSN号0168-583X
DOI10.1016/j.nimb.2008.10.082
英文摘要Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit). (C) 2008 Elsevier B.V. All rights reserved.
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000263454500015
出版者ELSEVIER SCIENCE BV
公开日期2010-10-29
源URL[http://ir.imp.cas.cn/handle/113462/5249]  
专题近代物理研究所_近代物理研究所知识存储（2010之前）
通讯作者Li Yonghong
作者单位1.Xi An Jiao Tong Univ, Xian 710049, Peoples R China
2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
4.China Inst Atom Energy, Beijing 102413, Peoples R China
推荐引用方式
GB/T 7714		 Li Yonghong,He Chaohui,Zhao Fazhan,et al. Experimental study on heavy ion single event effects in SOI SRAMs[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2009,267(1):83-86.
APA Li Yonghong.,He Chaohui.,Zhao Fazhan.,Guo Tianlei.,Liu Gang.,...&Guo Gang.(2009).Experimental study on heavy ion single event effects in SOI SRAMs.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,267(1),83-86.
MLA Li Yonghong,et al."Experimental study on heavy ion single event effects in SOI SRAMs".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 267.1(2009):83-86.

入库方式： OAI收割

来源：近代物理研究所

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