中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study of the interaction of highly charged ions with SiO2 surface

文献类型:期刊论文

作者Peng, H. B.1; Cheng, R.1; Yang, X. Y.1; Han, Y. C.1; Zhao, Y. T.2; Yang, J.1; Wang, S. W.1; Fang, Y.2; Wang, T. S.1
刊名SURFACE & COATINGS TECHNOLOGY
出版日期2009-06-15
卷号203期号:17-18页码:2387-2389
关键词Highly charged ions (HCIs) Sputtering yield Sputtering
ISSN号0257-8972
DOI10.1016/j.surfcoat.2009.02.029
英文摘要Highly charged ions (HCIs) AO(q+)/Pbq+ are extracted from ECR source and impacted on solid surface Of SiO2 Sputtering yield as a function of incident angle is measured by multi-channel plate (MCP). The results have been fitted by a new formula. We proposed the cooperation model to explain the formula. The results demonstrate that the potential assisted kinetic sputtering yield increases with the charge state and potential sputtering (PS) could be induced by impact of HCIs. At larger incident angles, the sputtering yield is dominated by elastic collision between HCIs and material atoms. It is found that, smaller the incident angle, larger the contribution from the potential sputtering. (C) 2009 Elsevier B.V. All rights reserved.
WOS关键词INSULATOR SURFACES ; SLOW ; DESORPTION ; IMPACT ; ATOMS
WOS研究方向Materials Science ; Physics
语种英语
WOS记录号WOS:000266682000010
出版者ELSEVIER SCIENCE SA
公开日期2010-10-29
源URL[http://ir.imp.cas.cn/handle/113462/5281]  
专题近代物理研究所_近代物理研究所知识存储(2010之前)
通讯作者Peng, H. B.
作者单位1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Peng, H. B.,Cheng, R.,Yang, X. Y.,et al. Study of the interaction of highly charged ions with SiO2 surface[J]. SURFACE & COATINGS TECHNOLOGY,2009,203(17-18):2387-2389.
APA Peng, H. B..,Cheng, R..,Yang, X. Y..,Han, Y. C..,Zhao, Y. T..,...&Wang, T. S..(2009).Study of the interaction of highly charged ions with SiO2 surface.SURFACE & COATINGS TECHNOLOGY,203(17-18),2387-2389.
MLA Peng, H. B.,et al."Study of the interaction of highly charged ions with SiO2 surface".SURFACE & COATINGS TECHNOLOGY 203.17-18(2009):2387-2389.

入库方式: OAI收割

来源:近代物理研究所

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