V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films
文献类型：期刊论文
| 作者 | Tang, J. X.1,2; Tang, M. H.1; Zhang, J.1; Yang, F.1; Zhao, W. F.1; Xu, H. Y.1; Sun, Z. H.1; Zhou, Y. C.1 |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2008-06-30 |
| 卷号 | 62期号:17-18页码:3189-3191 |
| 关键词 | BYTV thin film P-E hysteresis loops leakage current fatigue performance |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2008.02.049 |
| 英文摘要 | In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V. |
| WOS关键词 | SUBSTITUTED BISMUTH TITANATE ; MODERATE TEMPERATURE ; NONVOLATILE MEMORIES ; STRUCTURE EVOLUTION ; DEPOSITION ; ORIENTATION ; RETENTION |
| WOS研究方向 | Materials Science ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000256780700180 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5541]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Tang, M. H. |
| 作者单位 | 1.Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang, J. X.,Tang, M. H.,Zhang, J.,et al. V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films[J]. MATERIALS LETTERS,2008,62(17-18):3189-3191. |
| APA | Tang, J. X..,Tang, M. H..,Zhang, J..,Yang, F..,Zhao, W. F..,...&Zhou, Y. C..(2008).V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films.MATERIALS LETTERS,62(17-18),3189-3191. |
| MLA | Tang, J. X.,et al."V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films".MATERIALS LETTERS 62.17-18(2008):3189-3191. |
入库方式： OAI收割
来源：近代物理研究所
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