Modification of ZnO films under high energy Xe-ion irradiations
文献类型：期刊论文
| 作者 | Zang, H.1,2; Wang, Z. G.1; Peng, X. P.1,3; Song, Y.1; Liu, C. B.1,2; Wei, K. F.1,2; Zhang, C. H.1; Yao, C. F.1; Ma, Y. Z.1; Zhou, L. H.1 |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2008-06-01 |
| 卷号 | 266期号:12-13页码:2863-2867 |
| 关键词 | ZnO films Xe-ion irradiation RBS XRD FESEM photoluminescence |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2008.03.131 |
| 英文摘要 | ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved. |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000257721300044 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5549]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Wang, Z. G. |
| 作者单位 | 1.CAS, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China 3.Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zang, H.,Wang, Z. G.,Peng, X. P.,et al. Modification of ZnO films under high energy Xe-ion irradiations[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2008,266(12-13):2863-2867. |
| APA | Zang, H..,Wang, Z. G..,Peng, X. P..,Song, Y..,Liu, C. B..,...&Gou, J..(2008).Modification of ZnO films under high energy Xe-ion irradiations.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,266(12-13),2863-2867. |
| MLA | Zang, H.,et al."Modification of ZnO films under high energy Xe-ion irradiations".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 266.12-13(2008):2863-2867. |
入库方式： OAI收割
来源：近代物理研究所
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