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Annealing effects in silicon implanted with helium

文献类型：期刊论文

作者Li, Bingsheng; Zhang, Chonghong; Zhou, Lihong; Yang, Yitao; Zhang, Honghua
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2008-12-01
卷号266期号:24页码:5112-5115
ISSN号0168-583X
关键词Atomic force microscopy Raman spectroscopy Surface morphology Implantation
DOI10.1016/j.nimb.2008.09.016
英文摘要Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.
WOS关键词SINGLE-CRYSTAL SILICON ; ION-IMPLANTATION ; HE-IMPLANTATION ; HYDROGEN ; CAVITIES ; MICROSCOPY ; DEFECTS ; VOIDS ; SI ; PERMEATION
资助项目National Natural Science Foundation of China[10575124]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
出版者ELSEVIER SCIENCE BV
WOS记录号WOS:000261911200006
资助机构National Natural Science Foundation of China
公开日期2010-10-29
源URL[http://ir.imp.cas.cn/handle/113462/5551]  
专题近代物理研究所_近代物理研究所知识存储（2010之前）
近代物理研究所_材料研究中心
近代物理研究所_先进核能材料研究室（ADS）
通讯作者Li, Bingsheng
作者单位Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Li, Bingsheng,Zhang, Chonghong,Zhou, Lihong,et al. Annealing effects in silicon implanted with helium[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2008,266(24):5112-5115.
APA Li, Bingsheng,Zhang, Chonghong,Zhou, Lihong,Yang, Yitao,&Zhang, Honghua.(2008).Annealing effects in silicon implanted with helium.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,266(24),5112-5115.
MLA Li, Bingsheng,et al."Annealing effects in silicon implanted with helium".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 266.24(2008):5112-5115.

入库方式： OAI收割

来源：近代物理研究所

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