Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation
文献类型：期刊论文
| 作者 | Liu Chun-Bao2,3; Wang Zhi-Guang2 ; Zang Hang2,3; Wei Kong-Fang2,3; Yao Cun-Feng2; Sheng Yan-Bin2; Ma Yi-Zhun2,3; Benyagoub, A.1; Toulemonde, M.1; Jin Yun-Fan2
|
| 刊名 | CHINESE PHYSICS C
 |
| 出版日期 | 2008-10-01 |
| 卷号 | 32期号:Suppl. 2页码:251-254 |
| 关键词 | heavy ion irradiation carbon ion implantation photoluminescence (PL) spectra |
| ISSN号 | 1674-1137 |
| 英文摘要 | Amorphous SiO2 thin films with about 400-500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0 x 10(17),5.0 X 10(17) or 1.2 x 10(18) ions/cm(2), then irradiated at RT by 853 MeV Pb ions to 5.0 x 10(11), 1.0 X.10(12) 2.0 x 10(12) or 5.0 x 10(12) ions/cm(2), respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0 x 10(12) Pb-ions/cm(2) irradiation produced huge blue and green light-emitters in 2.0 x 10(17) C-ions/cm(2) implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0 x 10(17) carbon-ions/cm(2) implanted samples, 2.0 x 10(12) Pb-ions/cm(2) irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0 x 10(12) Pb-ionS/cm(2) irradiation could,create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2 x 10(18) carbon-ions/cm(2) implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type Of SiO2-based light-emission materials. |
| WOS关键词 | VISIBLE PHOTOLUMINESCENCE ; SILICON NANOCRYSTALS ; THERMAL SIO2-FILMS ; IMPLANTED SIO2 ; THIN-FILMS ; LUMINESCENCE ; CARBON ; LAYERS ; OXIDE |
| 资助项目 | Natural Science Foundation of China[10125522] ; Natural Science Foundation of China[10475102] ; Chinese Academy of Sciences |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000261998300067 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | Natural Science Foundation of China ; Chinese Academy of Sciences |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5731]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Liu Chun-Bao |
| 作者单位 | 1.CIRIL, F-14070 Caen 05, France 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Chun-Bao,Wang Zhi-Guang,Zang Hang,et al. Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation[J]. CHINESE PHYSICS C,2008,32(Suppl. 2):251-254. |
| APA | Liu Chun-Bao.,Wang Zhi-Guang.,Zang Hang.,Wei Kong-Fang.,Yao Cun-Feng.,...&Jin Yun-Fan.(2008).Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation.CHINESE PHYSICS C,32(Suppl. 2),251-254. |
| MLA | Liu Chun-Bao,et al."Investigation of PL properties of C-doped SiO2/Si samples after high energy Pb ion irradiation".CHINESE PHYSICS C 32.Suppl. 2(2008):251-254. |
入库方式： OAI收割
来源：近代物理研究所
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