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Surface morphology of He-implanted single-crystalline silicon

文献类型：期刊论文

作者Li Bing-Sheng1,2; Zhang Chong-Hong1; Zhou Li-Hong1,2; Yang Yi-Tao1,2
刊名CHINESE PHYSICS C
出版日期2008-10-01
卷号32期号:Suppl. 2页码:255-258
关键词crystalline silicon He ion implantation He bubble Cavities blisters morphology
ISSN号1674-1137
英文摘要Single-crystalline Si (100) samples were implanted with 30 keV He(2+) ions to doses ranging from 2.0x10(16) to 2.0x10(17) ions/cm(2) and subsequently thermally annealed at 800 degrees C for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0 x 10(16) ions /cm(2) implanted sample surface; spherical-shaped blisters with an average height wound 10.0nm were found on the 5.0 x 10(16) ions/cm(2) implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0 X 10(17) ions /cm(2). Exfoliations occurred on the sample surface to a dose of 2.0 x10(17) ions /cm(2). Mechanisms underlying the surface change were discussed.
WOS关键词ION-IMPLANTATION ; BUBBLE FORMATION ; VOIDS ; METALS ; ENERGY ; SI
资助项目National Natural Science Foundation of China[10575124] ; director's foundation in Institute of Modern Physics (IMP)[0505060SZo]
WOS研究方向Physics
语种英语
WOS记录号WOS:000261998300068
出版者SCIENCE PRESS
资助机构National Natural Science Foundation of China ; director's foundation in Institute of Modern Physics (IMP)
公开日期2010-10-29
源URL[http://ir.imp.cas.cn/handle/113462/5733]  
专题近代物理研究所_近代物理研究所知识存储（2010之前）
近代物理研究所_材料研究中心
近代物理研究所_先进核能材料研究室（ADS）
通讯作者Li Bing-Sheng
作者单位1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714		 Li Bing-Sheng,Zhang Chong-Hong,Zhou Li-Hong,et al. Surface morphology of He-implanted single-crystalline silicon[J]. CHINESE PHYSICS C,2008,32(Suppl. 2):255-258.
APA Li Bing-Sheng,Zhang Chong-Hong,Zhou Li-Hong,&Yang Yi-Tao.(2008).Surface morphology of He-implanted single-crystalline silicon.CHINESE PHYSICS C,32(Suppl. 2),255-258.
MLA Li Bing-Sheng,et al."Surface morphology of He-implanted single-crystalline silicon".CHINESE PHYSICS C 32.Suppl. 2(2008):255-258.

入库方式： OAI收割

来源：近代物理研究所

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