Damage accumulation in gallium nitride irradiated with various energetic heavy ions
文献类型：期刊论文
| 作者 | Zhang, C. H. ; Song, Y.; Sun, Y. M.; Chen, H.; Yang, Y. T.; Zhou, L. H.; Jin, Y. F.
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2007-03-01 |
| 卷号 | 256期号:1页码:199-206 |
| 关键词 | GaN swift heavv ions slow highly-charged ions RBS-channeling Raman scattering TEM |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2006.12.003 |
| 英文摘要 | In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions. (c) 2006 Elsevier B.V. All rights reserved. |
| WOS关键词 | HIGHLY-CHARGED IONS ; IMPLANTED GAN ; DISORDER |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000245959300041 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5985]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Song, Y.,Sun, Y. M.,et al. Damage accumulation in gallium nitride irradiated with various energetic heavy ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2007,256(1):199-206. |
| APA | Zhang, C. H..,Song, Y..,Sun, Y. M..,Chen, H..,Yang, Y. T..,...&Jin, Y. F..(2007).Damage accumulation in gallium nitride irradiated with various energetic heavy ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,256(1),199-206. |
| MLA | Zhang, C. H.,et al."Damage accumulation in gallium nitride irradiated with various energetic heavy ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 256.1(2007):199-206. |
入库方式： OAI收割
来源：近代物理研究所
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