Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu
文献类型：期刊论文
| 作者 | Zhang, C. H. ; Sun, Y. M.; Song, Y.; Shibayama, T.; Jin, Y. F.; Zhou, L. H.
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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| 出版日期 | 2007-03-01 |
| 卷号 | 256期号:1页码:243-247 |
| 关键词 | 4H-SiC Ne ions Xe ions irradiation TEM defects |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2006.12.010 |
| 英文摘要 | In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region. (c) 2006 Elsevier B.V. All rights reserved. |
| WOS关键词 | TRANSMISSION ELECTRON-MICROSCOPY ; HELIUM IMPLANTATION ; DISLOCATION LOOPS ; EVOLUTION ; CAVITIES ; TEM |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000245959300050 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5987]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_材料研究中心 |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Hokkaido Univ, Ctr Adv Res Energy Convers Mat, Sapporo, Hokkaido, Japan 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Sun, Y. M.,Song, Y.,et al. Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2007,256(1):243-247. |
| APA | Zhang, C. H.,Sun, Y. M.,Song, Y.,Shibayama, T.,Jin, Y. F.,&Zhou, L. H..(2007).Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,256(1),243-247. |
| MLA | Zhang, C. H.,et al."Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 256.1(2007):243-247. |
入库方式： OAI收割
来源：近代物理研究所
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