Microstructural evolution in silicon implanted with chlorine ions
文献类型：期刊论文
| 作者 | Zhang, C. H.; Shibayama, T.; Jin, Y. F.; Yang, Y. T.; Zhou, L. H.; Song, Y. |
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2007-03-01 |
| 卷号 | 256期号:1页码:272-275 |
| 关键词 | silicon chlorine implantation TEM re-crystallization defects |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2006.12.015 |
| 英文摘要 | In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level. (c) 2006 Elsevier B.V. All rights reserved. |
| WOS关键词 | BEHAVIOR |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000245959300055 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2010-10-29 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/5989]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Zhang, C. H. |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Hokkaido Univ, Ctr Adv Res Energy Convers Mat, Sapporo, Hokkaido 060, Japan |
| 推荐引用方式 GB/T 7714 | Zhang, C. H.,Shibayama, T.,Jin, Y. F.,et al. Microstructural evolution in silicon implanted with chlorine ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2007,256(1):272-275. |
| APA | Zhang, C. H.,Shibayama, T.,Jin, Y. F.,Yang, Y. T.,Zhou, L. H.,&Song, Y..(2007).Microstructural evolution in silicon implanted with chlorine ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,256(1),272-275. |
| MLA | Zhang, C. H.,et al."Microstructural evolution in silicon implanted with chlorine ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 256.1(2007):272-275. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。