Raman investigation of ion-implanted ZnO films
文献类型：期刊论文
| 作者 | Yao Cun-Feng1,2 ; Shen Tie-Long1,2; Sun Jian-Rong1; Zang Hang1,2; Wang Zhi-Guang1; Pang Li-Long1,2; Ma Yi-Zhun1,2; Gou Jie1; Sheng Yan-Bin1; Zhu Ya-Bin1,2
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-07-01 |
| 卷号 | 59期号:7页码:4831-4836 |
| 关键词 | ZnO films ion implantation Raman spectroscopy |
| ISSN号 | 1000-3290 |
| 英文摘要 | ZnO thin films were implanted at room temperature with 80 keV N(+) or 400 keV Xe(+) ions. The implantation fluences of N(+) and Xe(+) ranged from 5.0 x 10(14) to 1.0 x 10(17)/cm(2), and from 2.0 x 10(14) to 5.0 x 10(15)/cm(2), respectively. The samples were analyzed using Raman spectroscopy and the Raman scattering modes of the N- and Xe-ion implanted samples varying with implantation fluences were investigated. It was found that Raman peaks (bands) at 130 and 578 cm(-1) appeared in the spectra of ion-implanted ZnO samples, which are independent of the ion species, whereas a new peak at 274 cm(-1) was found only in N-ion implanted samples, and Raman band at 470 cm(-1) was found clearly in Xe-ion implanted samples. The relative intensity (peak area) increased with the increasing of the implantation fluences. From the comparison of the Raman spectra of N- and Xe-ion implanted ZnO samples and considering the damage induced by the ions, we analyzed the origin of the observed new Raman peaks (bands) and discussed the structure changes of ZnO films induced by N- and Xe-ion implantations. |
| WOS关键词 | THIN-FILMS ; FERROMAGNETISM ; SCATTERING ; MODES |
| 资助项目 | National Basic Research Program of China[2010CB832902] ; National Natural Science Foundation of China[10835010] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000280168700066 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | National Basic Research Program of China ; National Natural Science Foundation of China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7651]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_先进核能材料研究室（ADS） 近代物理研究所_能源材料研究组 |
| 通讯作者 | Wang Zhi-Guang |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yao Cun-Feng,Shen Tie-Long,Sun Jian-Rong,et al. Raman investigation of ion-implanted ZnO films[J]. ACTA PHYSICA SINICA,2010,59(7):4831-4836. |
| APA | Yao Cun-Feng.,Shen Tie-Long.,Sun Jian-Rong.,Zang Hang.,Wang Zhi-Guang.,...&Wei Kong-Fang.(2010).Raman investigation of ion-implanted ZnO films.ACTA PHYSICA SINICA,59(7),4831-4836. |
| MLA | Yao Cun-Feng,et al."Raman investigation of ion-implanted ZnO films".ACTA PHYSICA SINICA 59.7(2010):4831-4836. |
入库方式： OAI收割
来源：近代物理研究所
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