Study on nanohardness of helium-implanted 4H-SiC
文献类型：期刊论文
| 作者 | Yang Yi-Tao1,2 ; Zhou Li-Hong1,2; Zhang Chong-Hong1; Zhang Yong1,2; Li Bing-Sheng1,2
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-06-01 |
| 卷号 | 59期号:6页码:4130-4135 |
| 关键词 | silicon carbide implantation lie bubbles nano-indentation |
| ISSN号 | 1000-3290 |
| 英文摘要 | The hardness of 4H-SiC, which was high-temperature (500 K) helium-Implanted to fluences of 3 x 10(16) Ions cm(-2) and subsequently thermally annealed at the temperature ranging from 773 to 1273 K, was studied by nanoindentation It is found that the hardness of the implanted 4H-SiC increases at the first, then decreases, and then increases again with increasing annealing tempeature in the temperature range of 500-1273 K, and significant increase in hardness is observed at 773 K. The behavior is ascribed to the changes of the density, length, and tangling of the covalent Si-C bond through the recombination of point defects, clustering of He-vacancy, and growth of helium bubbles during the thermal annealing |
| WOS关键词 | ELECTRON-SPIN-RESONANCE ; SILICON-CARBIDE ; MECHANICAL-PROPERTIES ; CAVITIES ; RELEASE |
| 资助项目 | National Natural Science Foundation of China[10575124] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000278672300074 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7697]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_材料研究中心 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Zhang Chong-Hong |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang Yi-Tao,Zhou Li-Hong,Zhang Chong-Hong,et al. Study on nanohardness of helium-implanted 4H-SiC[J]. ACTA PHYSICA SINICA,2010,59(6):4130-4135. |
| APA | Yang Yi-Tao,Zhou Li-Hong,Zhang Chong-Hong,Zhang Yong,&Li Bing-Sheng.(2010).Study on nanohardness of helium-implanted 4H-SiC.ACTA PHYSICA SINICA,59(6),4130-4135. |
| MLA | Yang Yi-Tao,et al."Study on nanohardness of helium-implanted 4H-SiC".ACTA PHYSICA SINICA 59.6(2010):4130-4135. |
入库方式： OAI收割
来源：近代物理研究所
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