Slow highly charged ions induced electron emission from clean Si surfaces
文献类型：期刊论文
| 作者 | Zhao Yong-Tao1 ; Xu Zhong-Feng1,2; Wang Jian-Guo2; Wang Yu-Yu1; Li De-Hui1; Zhao Di1,2; Xiao Guo-Qing1
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| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 59期号:11页码:7803-7807 |
| 关键词 | slow highly charged ions electron emission recoil atom stopping power |
| ISSN号 | 1000-3290 |
| 英文摘要 | The electron emission yields from the interaction of slow highly charged ions (SHCI) He(2+), O(2+) and Ne(2+) with clean Si surface are measured separately. It is found that electron emission yield gamma increases proportionally to projectile kinetic energy E(p)/M(p), ranging from 0.75 keV/u to 10.5 keV/u (i.e. 3.8 x 10(5) m/s <= v(p) <= 1.42 x 10(6) m/s), and it is higher for heavy ions (O(2+) and Ne(2+)) than for light ion (He(2+)). For O(2+) and Ne(2+), gamma increases with Z(p) decreasing in our energy range, and it shows quite different from the result for higher projectile kinetic energy. After calculating the stopping power by using TRIM 2006, it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy, thereby leads to the differences in gamma for heavy ions O(2+) and Ne(2+) between lower and higher projectile kinetic energy. |
| WOS关键词 | SECONDARY ELECTRONS ; WORK FUNCTION ; BOMBARDMENT ; SOLIDS ; YIELDS |
| 资助项目 | National Natural Science Foundation of China[11075125] ; National Natural Science Foundation of China[10805063] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000284659900045 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7713]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_实验物理中心 近代物理研究所_兰州重离子研究装置 |
| 通讯作者 | Wang Jian-Guo |
| 作者单位 | 1.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 2.Xi An Jiao Tong Univ, Dept Appl Phys, MOE Key Lab Nonequilibrium Synth & Modulat Conden, Xian 710049, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao Yong-Tao,Xu Zhong-Feng,Wang Jian-Guo,et al. Slow highly charged ions induced electron emission from clean Si surfaces[J]. ACTA PHYSICA SINICA,2010,59(11):7803-7807. |
| APA | Zhao Yong-Tao.,Xu Zhong-Feng.,Wang Jian-Guo.,Wang Yu-Yu.,Li De-Hui.,...&Xiao Guo-Qing.(2010).Slow highly charged ions induced electron emission from clean Si surfaces.ACTA PHYSICA SINICA,59(11),7803-7807. |
| MLA | Zhao Yong-Tao,et al."Slow highly charged ions induced electron emission from clean Si surfaces".ACTA PHYSICA SINICA 59.11(2010):7803-7807. |
入库方式： OAI收割
来源：近代物理研究所
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