X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions
文献类型：期刊论文
| 作者 | Han Lu-Hui1,2; Zhang Chong-Hong2 ; Zhang Li-Qing2; Sun You-Mei2; Song Yin2; Yang Yi-Tao1,2
|
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010-07-01 |
| 卷号 | 59期号:7页码:4584-4590 |
| 关键词 | gallium nitride (GaN) crystal highly-charged heavy ions X-ray photoelectron spectroscopy (XPS) |
| ISSN号 | 1000-3290 |
| 英文摘要 | We utilize slow highly charged ions of Xeq+ and Pbq+ to irradiate GaN crystal films grown on sapphire substrate, and use X-ray photoelectron spectroscopy to analyze its surface chemical composition and chemical state of the elements. The results show that highly charged ions can etch the sample surface obviously, and the GaN sample irradiated by highly charged ions has N depletion or is Ga rich on its surface. Besides, the relative content of Ga-Ga bond increases as the dose and charge state of the incident ions increase. In addition, the binding energy of Ga 3d(5/2) electrons corresponding to Ga-Ga bond of the irradiated GaN sample is smaller compared with that of the Ga bulk material. This can be attributed to the lattice damage, which shifts the binding energy of inner orbital electrons to the lower end. |
| WOS关键词 | INDUCED NITRIDATION ; GALLIUM NITRIDE ; SURFACE ; DAMAGE ; IMPLANTATION ; BOMBARDMENT ; NUCLEATION ; DEPENDENCE ; GROWTH ; OXIDE |
| 资助项目 | National Natural Science Foundation of China[10575124] |
| WOS研究方向 | Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000280168700028 |
| 出版者 | CHINESE PHYSICAL SOC |
| 资助机构 | National Natural Science Foundation of China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7723]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_材料研究中心 |
| 通讯作者 | Han Lu-Hui |
| 作者单位 | 1.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han Lu-Hui,Zhang Chong-Hong,Zhang Li-Qing,et al. X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions[J]. ACTA PHYSICA SINICA,2010,59(7):4584-4590. |
| APA | Han Lu-Hui,Zhang Chong-Hong,Zhang Li-Qing,Sun You-Mei,Song Yin,&Yang Yi-Tao.(2010).X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions.ACTA PHYSICA SINICA,59(7),4584-4590. |
| MLA | Han Lu-Hui,et al."X-ray photoelectron spectroscopy study on GaN crystal irradiated by slow highly charged ions".ACTA PHYSICA SINICA 59.7(2010):4584-4590. |
入库方式： OAI收割
来源：近代物理研究所
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