Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting
文献类型：期刊论文
| 作者 | Li, B. S.; Zhang, L. Q.; Zhou, L. H.; Yang, Y. T.; Zhang, Y. ; Zhang, H. H.; Zhang, C. H.
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| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2010-03-15 |
| 卷号 | 268期号:6页码:555-559 |
| 关键词 | Microcrack Blister Annealing Implantation |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2009.12.009 |
| 英文摘要 | A thermodynamic model of the evolution of microcracks in silicon caused by helium and hydrogen co-implantation during annealing was studied. The crack growth rate relies on the amount of helium atoms and hydrogen molecules present. Here, the crack radius was studied as a function of annealing time and temperature, and compared with experimental results. The mean crack radius was found to be proportional to the annealing temperature and the helium and hydrogen implanted fluence. The gas desorption should be considered during annealing process. (C) 2009 Elsevier B.V. All rights reserved. |
| WOS关键词 | SINGLE-CRYSTAL SILICON ; COIMPLANTATION ; EXFOLIATION ; MECHANISM |
| 资助项目 | National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[10979063] ; Key Laboratory of Beam Technology and Material Modification of Ministry of Education Opening Foundation, Beijing Normal University, China |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000276053700003 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China ; Key Laboratory of Beam Technology and Material Modification of Ministry of Education Opening Foundation, Beijing Normal University, China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7755]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, B. S.,Zhang, L. Q.,Zhou, L. H.,et al. Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(6):555-559. |
| APA | Li, B. S..,Zhang, L. Q..,Zhou, L. H..,Yang, Y. T..,Zhang, Y..,...&Zhang, C. H..(2010).Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,268(6),555-559. |
| MLA | Li, B. S.,et al."Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268.6(2010):555-559. |
入库方式： OAI收割
来源：近代物理研究所
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