The effects of the annealing time on helium implantation in Si
文献类型：期刊论文
| 作者 | Zhang, L. Q.; Zhou, L. H.; Yang, Y. T.; Zhang, H. H.; Zhang, C. H.; Li, B. S.; Zhang, Y.
|
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 268期号:21页码:3390-3394 |
| 关键词 | Surface morphology Atomic force microscopy Transmission electron microscopy Implantation |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2010.08.009 |
| 英文摘要 | The modifications induced in silicon samples by helium implantation before and after isothermal annealing at 673 K have been investigated. The surface morphology has been detected by atomic force microscopy. A hillock structure is observed on the sample surface before and after annealing for 5-10 min. Surface blister formation is observed with an increasing annealing time. The variation of crystal damage with annealing time has been investigated by Rutherford backscattering/channeling. The intensity of the damage peak first increases with annealing time, reaches maximum at an annealing time of 60 min and then decreases. Helium-induced bubbles and residual defects have been observed by transmission electron microscopy, which shows that dislocations are close to the bubbles. (C) 2010 Elsevier B.V. All rights reserved. |
| WOS关键词 | TRANSIENT ENHANCED DIFFUSION ; SINGLE-CRYSTAL SILICON ; BUBBLE PRECURSORS ; HE IMPLANTATION ; HYDROGEN ; VOIDS ; DEFECTS ; DAMAGE ; BORON |
| 资助项目 | National Natural Science Foundation of China[10575124] ; National Natural Science Foundation of China[10979063] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000283393600005 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7759]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Li, B. S. |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, L. Q.,Zhou, L. H.,Yang, Y. T.,et al. The effects of the annealing time on helium implantation in Si[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(21):3390-3394. |
| APA | Zhang, L. Q..,Zhou, L. H..,Yang, Y. T..,Zhang, H. H..,Zhang, C. H..,...&Zhang, Y..(2010).The effects of the annealing time on helium implantation in Si.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,268(21),3390-3394. |
| MLA | Zhang, L. Q.,et al."The effects of the annealing time on helium implantation in Si".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268.21(2010):3390-3394. |
入库方式： OAI收割
来源：近代物理研究所
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