中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structural and optical properties of 6H-SiC helium-implanted at 600 K

文献类型:期刊论文

作者Han, L. H.2; Zhang, H. H.1,2; Zhang, C. H.2; Li, B. S.2; Zhang, Y.2
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2010-07-15
卷号268期号:14页码:2318-2324
关键词6H-SiC Implantation damage Annealing RBS-C Raman FTIR
ISSN号0168-583X
DOI10.1016/j.nimb.2010.04.012
英文摘要Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He(+)/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved.
WOS关键词SILICON-CARBIDE ; DAMAGE PRODUCTION ; HE-IMPLANTATION ; SIC POLYTYPES ; SPECTROSCOPY ; RAMAN ; DEFECTS ; CAVITIES ; BUBBLES ; LAYERS
资助项目National Natural Science Foundation of China[10979063]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000279041400003
出版者ELSEVIER SCIENCE BV
资助机构National Natural Science Foundation of China
公开日期2011-04-20
源URL[http://ir.imp.cas.cn/handle/113462/7779]  
专题近代物理研究所_近代物理研究所知识存储(2010之前)
通讯作者Zhang, H. H.
作者单位1.Jiangxi Sci & Technol Normal Univ, Jiangxi Key Lab Surface & Engn, Nanchang 330013, Peoples R China
2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
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Han, L. H.,Zhang, H. H.,Zhang, C. H.,et al. Structural and optical properties of 6H-SiC helium-implanted at 600 K[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(14):2318-2324.
APA Han, L. H.,Zhang, H. H.,Zhang, C. H.,Li, B. S.,&Zhang, Y..(2010).Structural and optical properties of 6H-SiC helium-implanted at 600 K.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,268(14),2318-2324.
MLA Han, L. H.,et al."Structural and optical properties of 6H-SiC helium-implanted at 600 K".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268.14(2010):2318-2324.

入库方式: OAI收割

来源:近代物理研究所

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