Structural and optical properties of 6H-SiC helium-implanted at 600 K
文献类型：期刊论文
| 作者 | Han, L. H.2; Zhang, H. H.1,2; Zhang, C. H.2; Li, B. S.2; Zhang, Y.2
|
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 2010-07-15 |
| 卷号 | 268期号:14页码:2318-2324 |
| 关键词 | 6H-SiC Implantation damage Annealing RBS-C Raman FTIR |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2010.04.012 |
| 英文摘要 | Single crystals of 6H-SiC were implanted at 600 K with 100 key He ions to three successively fluences and subsequently annealed at different temperatures ranging from 873 to 1473 K in vacuum. The recovery of lattice damage was investigated by different techniques including Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy and Fourier transform infrared spectroscopy. All three techniques showed that the damage induced by helium ion implantation in the lattice is closely related to the fluence. Rutherford backscattering spectrometry/channeling data on high temperature implantations suggest that for a fluence of 3 x 10(16) He(+)/cm(2), extended defects are created by thermal annealing to 1473 K. Apart from a well-known intensity decrease of scattering peaks in Raman spectroscopy it was found that the absorbance peak in Fourier transform infrared spectroscopy due to the stretching vibration of Si-C bond shifted to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with increasing annealing temperature. These phenomena are attributed to different lattice damage behavior induced by the hot implantation process, in which simultaneous recovery was prevailing. (C) 2010 Elsevier B.V. All rights reserved. |
| WOS关键词 | SILICON-CARBIDE ; DAMAGE PRODUCTION ; HE-IMPLANTATION ; SIC POLYTYPES ; SPECTROSCOPY ; RAMAN ; DEFECTS ; CAVITIES ; BUBBLES ; LAYERS |
| 资助项目 | National Natural Science Foundation of China[10979063] |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000279041400003 |
| 出版者 | ELSEVIER SCIENCE BV |
| 资助机构 | National Natural Science Foundation of China |
| 公开日期 | 2011-04-20 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/7779]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Zhang, H. H. |
| 作者单位 | 1.Jiangxi Sci & Technol Normal Univ, Jiangxi Key Lab Surface & Engn, Nanchang 330013, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Han, L. H.,Zhang, H. H.,Zhang, C. H.,et al. Structural and optical properties of 6H-SiC helium-implanted at 600 K[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2010,268(14):2318-2324. |
| APA | Han, L. H.,Zhang, H. H.,Zhang, C. H.,Li, B. S.,&Zhang, Y..(2010).Structural and optical properties of 6H-SiC helium-implanted at 600 K.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,268(14),2318-2324. |
| MLA | Han, L. H.,et al."Structural and optical properties of 6H-SiC helium-implanted at 600 K".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 268.14(2010):2318-2324. |
入库方式： OAI收割
来源：近代物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。