Paramagnetic defect production in silicon after 112MeV Ar ionirradiation
文献类型：期刊论文
| 作者 | Liu ; CLHou ; MDZhu ; ZYCheng ; SLi ; BQSun ; YMWang ; ZGJin ; YFLi ; CLWang ; YSMeng |
| 刊名 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
 |
| 出版日期 | 1998 |
| 卷号 | 22期号:9页码:858-863 |
| 关键词 | Ar Ion irradiatIon Defect Electron Paramagnetic Resonance Annealing |
| ISSN号 | 0254-3052 |
| 通讯作者 | Liu, CL, Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R |
| 语种 | 英语 |
| 公开日期 | 2011-08-26 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/9885]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 推荐引用方式 GB/T 7714 | Liu,CLHou,MDZhu,et al. Paramagnetic defect production in silicon after 112MeV Ar ionirradiation[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,1998,22(9):858-863. |
| APA | Liu.,CLHou.,MDZhu.,ZYCheng.,SLi.,...&YSMeng.(1998).Paramagnetic defect production in silicon after 112MeV Ar ionirradiation.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,22(9),858-863. |
| MLA | Liu,et al."Paramagnetic defect production in silicon after 112MeV Ar ionirradiation".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 22.9(1998):858-863. |
入库方式： OAI收割
来源：近代物理研究所
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