EPR studies on defect production and its annealing behavior in siliconafter high fluence Ar ion irradiation
文献类型：期刊论文
| 作者 | Liu ; CLHou ; MDCheng ; SZhu ; ZYWang ; ZGSun ; YMJin ; YFLi |
| 刊名 | HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
 |
| 出版日期 | 1998 |
| 卷号 | 22期号:7页码:651-657 |
| 关键词 | Ar Ion irradiatIon Defect Production Electron Paramagnetic Resonance |
| ISSN号 | 0254-3052 |
| 通讯作者 | Liu, CL, Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R |
| 语种 | 英语 |
| 公开日期 | 2011-08-26 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/9901]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 推荐引用方式 GB/T 7714 | Liu,CLHou,MDCheng,et al. EPR studies on defect production and its annealing behavior in siliconafter high fluence Ar ion irradiation[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,1998,22(7):651-657. |
| APA | Liu.,CLHou.,MDCheng.,SZhu.,ZYWang.,...&YFLi.(1998).EPR studies on defect production and its annealing behavior in siliconafter high fluence Ar ion irradiation.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,22(7),651-657. |
| MLA | Liu,et al."EPR studies on defect production and its annealing behavior in siliconafter high fluence Ar ion irradiation".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 22.7(1998):651-657. |
入库方式： OAI收割
来源：近代物理研究所
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