中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The formation and characteristics of Si1-xCx alloys in Si crystals bymeans of implantation of cions with different doses

文献类型:期刊论文

作者Wang ; YS ; Li ; JMJin ; YFWang ; YTLin
刊名ACTA PHYSICA SINICA
出版日期2000
卷号49期号:11页码:2210-2213
关键词Si1-xcx Alloy Ion implantatIon Solid Phase Epitaxy
ISSN号1000-3290
通讯作者Wang, YS, Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R
语种英语
公开日期2011-08-26
源URL[http://ir.imp.cas.cn/handle/113462/10231]  
专题近代物理研究所_近代物理研究所知识存储(2010之前)
推荐引用方式
GB/T 7714
Wang,YS,Li,et al. The formation and characteristics of Si1-xCx alloys in Si crystals bymeans of implantation of cions with different doses[J]. ACTA PHYSICA SINICA,2000,49(11):2210-2213.
APA Wang,YS,Li,JMJin,YFWang,&YTLin.(2000).The formation and characteristics of Si1-xCx alloys in Si crystals bymeans of implantation of cions with different doses.ACTA PHYSICA SINICA,49(11),2210-2213.
MLA Wang,et al."The formation and characteristics of Si1-xCx alloys in Si crystals bymeans of implantation of cions with different doses".ACTA PHYSICA SINICA 49.11(2000):2210-2213.

入库方式: OAI收割

来源:近代物理研究所

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