Investigation of defects in high-energy heavy ion implanted GaAs
文献类型：期刊论文
| 作者 | Chen, ZQ; Wang, Z; Wang, SJ; Hou, MD |
| 刊名 | APPLIED RADIATION AND ISOTOPES
 |
| 出版日期 | 2000 |
| 卷号 | 52期号:1页码:39-45 |
| ISSN号 | 0969-8043 |
| 关键词 | heavy ion implantation gallium arsenide defects positron annihilation |
| 英文摘要 | Undoped semi-insulating GaAs were implanted with 500 MeV Ne ions. Monte Carlo simulation revealed that the largest concentration of vacancies induced was around the end of the Ne ion range. Positron Annihilation measurement showed that after lower dose implantation, divacancies were formed, which coexisted with monovacancies. On increasing the dose, all the monovacancies changed to divacancies. The temperature dependence of positron lifetime suggested the existence of negatively charged antisites Ga-As. Near infra-red spectra were also measured to study the implantation induced amorphous layers. (C) 2000 Elsevier Science Ltd. All rights reserved. |
| WOS关键词 | IRRADIATED SEMIINSULATING GAAS ; POSITRON-ANNIHILATION ; GALLIUM VACANCIES ; SI ; SEMICONDUCTORS ; ACCEPTORS ; LIFETIME ; DAMAGE ; INP |
| WOS研究方向 | Chemistry ; Nuclear Science & Technology ; Radiology, Nuclear Medicine & Medical Imaging |
| 语种 | 英语 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| WOS记录号 | WOS:000084820400006 |
| 公开日期 | 2011-08-26 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/10243]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） |
| 通讯作者 | Chen, ZQ |
| 作者单位 | 1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, ZQ,Wang, Z,Wang, SJ,et al. Investigation of defects in high-energy heavy ion implanted GaAs[J]. APPLIED RADIATION AND ISOTOPES,2000,52(1):39-45. |
| APA | Chen, ZQ,Wang, Z,Wang, SJ,&Hou, MD.(2000).Investigation of defects in high-energy heavy ion implanted GaAs.APPLIED RADIATION AND ISOTOPES,52(1),39-45. |
| MLA | Chen, ZQ,et al."Investigation of defects in high-energy heavy ion implanted GaAs".APPLIED RADIATION AND ISOTOPES 52.1(2000):39-45. |
入库方式： OAI收割
来源：近代物理研究所
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