Damage production in silicon irradiated with 112 MeV Ar ions
文献类型：期刊论文
| 作者 | Hou, MD; Cheng, S; Wang, ZG ; Zhu, ZY; Liu, CL; Li, CL; Sun, YM; Jin, YF
|
| 刊名 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 出版日期 | 1998-02-01 |
| 卷号 | 135期号:1-4页码:219-223 |
| 关键词 | irradiation amorphous region divacancy silicon |
| ISSN号 | 0168-583X |
| 英文摘要 | Silicon samples were irradiated below 50 K with 112 MeV Ar ions. Defect production was investigated at room temperature by EPR and infrared optical absorption techniques. The EPR measurements reveal the presence of amorphous zones and neutral tetravacancies (Si-P3 center) in the as-irradiated samples. The infrared optical absorption measurements indicate the formation of divacancy. The concentration of divacancy increases with ion fluence and saturates at high fluence. The isochronal annealing behaviors of the radiation induced defect centers are found to be fluence dependent. For 1.0 x 10(14)/cm(2) irradiated sample, the disappearance of the Si-P3 center is accompanied by the appearance of Si-P1 and Si-B2 centers and the growth of Si-A11 center. The Si-P1 center and the isolated amorphous regions are annealed out between 500 degrees C and 550 degrees C. The Si-A11 center is stable up to 600 degrees C. For 8.0 x 10(14)/cm(2) irradiated sample, only Si-P1 center and the line due to the continued amorphous layer are detected above 200 degrees C. The recrystallization of the continued amorphous layer occurs at temperature higher than 600 degrees C. (C) 1998 Elsevier Science B.V. |
| WOS关键词 | EPR |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| 语种 | 英语 |
| WOS记录号 | WOS:000074395300039 |
| 出版者 | ELSEVIER SCIENCE BV |
| 公开日期 | 2011-08-26 |
| 源URL | [http://ir.imp.cas.cn/handle/113462/10395]  |
| 专题 | 近代物理研究所_近代物理研究所知识存储（2010之前） 近代物理研究所_先进核能材料研究室（ADS） |
| 通讯作者 | Liu, CL |
| 作者单位 | Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hou, MD,Cheng, S,Wang, ZG,et al. Damage production in silicon irradiated with 112 MeV Ar ions[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1998,135(1-4):219-223. |
| APA | Hou, MD.,Cheng, S.,Wang, ZG.,Zhu, ZY.,Liu, CL.,...&Jin, YF.(1998).Damage production in silicon irradiated with 112 MeV Ar ions.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,135(1-4),219-223. |
| MLA | Hou, MD,et al."Damage production in silicon irradiated with 112 MeV Ar ions".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 135.1-4(1998):219-223. |
入库方式： OAI收割
来源：近代物理研究所
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